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UPD16877MA-6A5	文件：301.36 Kbytes Page：14 Pages	MOSINTEGRATEDCIRCUIT FEATURES FourHbridgecircuitsemployingpowerMOSFETs Lowcurrentconsumptionbyeliminatingchargepump VMpincurrentwhenpower-OFF:10mAMAX.VDDpincurrent:10mAMAX. Inputlogicfrequency:100kHz 3-Vpowersupply Minimumoperatingsupplyvoltage:2.5V Lowvoltagemalfunctionpr	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD16877MA-6A5	文件：74.1 Kbytes Page：6 Pages	MONOLITHICQUADH-BRIDGEDRIVERCIRCUIT DESCRIPTION TheµPD16877ismonolithicquadH-bridgedriverLSIwhichusespowerMOSFETsintheoutputstages.ByusingtheMOSprocess,thisdriverIChassubstantiallyimprovedsaturationvoltageandpowerconsumptionascomparedwithconventionaldrivercircuitsusingbipolartransistors.	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC

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UPD16877MA-6A5

文件：301.36 Kbytes

Page：14 Pages

MOSINTEGRATEDCIRCUIT

FEATURES FourHbridgecircuitsemployingpowerMOSFETs Lowcurrentconsumptionbyeliminatingchargepump VMpincurrentwhenpower-OFF:10mAMAX.VDDpincurrent:10mAMAX. Inputlogicfrequency:100kHz 3-Vpowersupply Minimumoperatingsupplyvoltage:2.5V Lowvoltagemalfunctionpr

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

UPD16877MA-6A5

文件：74.1 Kbytes

Page：6 Pages

MONOLITHICQUADH-BRIDGEDRIVERCIRCUIT

DESCRIPTION TheµPD16877ismonolithicquadH-bridgedriverLSIwhichusespowerMOSFETsintheoutputstages.ByusingtheMOSprocess,thisdriverIChassubstantiallyimprovedsaturationvoltageandpowerconsumptionascomparedwithconventionaldrivercircuitsusingbipolartransistors.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

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