| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
L-BANDSPDTSWITCH DESCRIPTION TheµPG2010TBisGaAsMMICforL-bandSPDT(SinglePoleDoubleThrow)switchwhichweredevelopedformobilephoneandanotherL-bandapplication. Thisdevicecanoperatefrequencyfrom0.5to2.5GHz,havingthelowinsertionlossandhighisolation. Thisdeviceishousedina6-pi | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
HIGHPOWERSINGLECONTROLL-BANDSPDTSWITCH DESCRIPTION NECsUPG2010TBisasinglecontrolGaAsMMICL-bandSPDT(SinglePoleDoubleThrow)switchformobilephoneandL-bandapplications. Thisdevicecanoperatefrom0.5to2.5GHz,withlowinsertionlossandhighisolation. Thisdeviceishousedina6-pinsuperminimoldpackage,suit | CEL California Eastern Laboratories | CEL | ||
GaAsINTEGRATEDCIRCUIT FEATURES •Supplyvoltage:VDD=2.7to3.0V(2.8VTYP.) •Switchcontrolvoltage:Vcont(H)=2.7to3.0V(2.8VTYP.) :Vcont(L)=−0.2to+0.2V(0VTYP.) •Lowinsertionloss:LINS1=0.25dBTYP.@f=0.5to1.0GHz,VDD=2.8V,Vcont=2.8V/0V :LINS2=0.30dBTYP.@f=2. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
POWERRECTIFIERS(20A,50-200V) SwitchmodeFullPlasticDualUltrafastPowerRectifiers ...Designedforuseinswitchingpowersupplies,invertersandasfreewheelingdiodes.Thesestate-of-the-artdeviceshavethefollowingfeatures: ✱HighSurgeCapacity ✱LowPowerLoss,HighEfficiency ✱GlassPassivatedchipjunction | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
SUPERFASTRECTIFIERS | DSK Diode Semiconductor Korea | DSK | ||
SuperFastRectifiers | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
RECTIFIERS | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
StandardRecovery,2Ampto4Amp | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
STANDARDRECOVERYRECTIFIERS | DIGITRON Digitron Semiconductors | DIGITRON | ||
Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安纳森半导体安纳森半导体香港有限公司 | ANASEM | ||
Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安纳森半导体安纳森半导体香港有限公司 | ANASEM | ||
UltraHighPrecisionZ-FoilFlipChipResistorwithTCRof±0.05ppm/°C,35SpaceSavingversusWraparoundDesignandPCRof5ppmatRatedPower | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InductorsforPowerCircuitsWoundFerriteVLS-Eseries OverviewoftheVLS-ESeries FEATURES Magneticshieldtypewoundinductorforpowercircuits. Low-profileproductlineupwithmax.heightsof0.8mm,0.95mm,1.0mm,1.2mm,and1.5mmallowingfordifferentusages. Highmagneticshieldconstructionandcompatiblewithhigh-densitymount | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | TDK | ||
InductorsforPowerCircuitsWoundFerrite OverviewoftheVLS-ESeries FEATURES Magneticshieldtypewoundinductorforpowercircuits. Low-profileproductlineupwithmax.heightsof0.8mm,0.95mm,1.0mm,1.2mm,and1.5mmallowingfordifferentusages. Highmagneticshieldconstructionandcompatiblewithhigh-densitymount | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | TDK | ||
InductorsforPowerCircuitsWoundFerrite OverviewoftheVLS-ESeries FEATURES Magneticshieldtypewoundinductorforpowercircuits. Low-profileproductlineupwithmax.heightsof0.8mm,0.95mm,1.0mm,1.2mm,and1.5mmallowingfordifferentusages. Highmagneticshieldconstructionandcompatiblewithhigh-densitymount | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | TDK | ||
InductorsforPowerCircuitsWoundFerrite OverviewoftheVLS-ESeries FEATURES Magneticshieldtypewoundinductorforpowercircuits. Low-profileproductlineupwithmax.heightsof0.8mm,0.95mm,1.0mm,1.2mm,and1.5mmallowingfordifferentusages. Highmagneticshieldconstructionandcompatiblewithhigh-densitymount | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | TDK | ||
InductorsforPowerCircuitsWoundFerrite OverviewoftheVLS-ESeries FEATURES Magneticshieldtypewoundinductorforpowercircuits. Low-profileproductlineupwithmax.heightsof0.8mm,0.95mm,1.0mm,1.2mm,and1.5mmallowingfordifferentusages. Highmagneticshieldconstructionandcompatiblewithhigh-densitymount | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | TDK | ||
InductorsforPowerCircuitsWoundFerrite OverviewoftheVLS-ESeries FEATURES Magneticshieldtypewoundinductorforpowercircuits. Low-profileproductlineupwithmax.heightsof0.8mm,0.95mm,1.0mm,1.2mm,and1.5mmallowingfordifferentusages. Highmagneticshieldconstructionandcompatiblewithhigh-densitymount | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | TDK | ||
N-ChannelEnhancement-ModeMOSTransistors
| Temic TEMIC Semiconductors | Temic | ||
N-Channel200-V(D-S)MOSFETs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
D/C |
CDIP |
1 |
特价热销现货库存100%原装正品欢迎来电订购! |
询价 | ||
CHILISIN/奇力新 |
24+ |
100ohm2.0x1.25x0.925 |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
YAGEO |
2018+ |
SMD |
827600 |
一级代理/全新现货/长期供应! |
询价 | ||
CHILISIN/奇力新 |
2016+ |
SMD |
366000 |
原装进口优势低价长期稳定供应 |
询价 | ||
YAGEO/国巨 |
2023+ |
2012 |
48000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
询价 | ||
chilisin(奇力新) |
23+ |
0805 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
CHILISIN/奇力新 |
2017 |
EIA0805 |
108381 |
现货库存一站式配套元器件 |
询价 | ||
24+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
奇力新/TAIYO |
2024+ |
SMD/SMA |
188600 |
全新原厂原装正品现货 欢迎咨询 |
询价 | ||
Chilisin/奇力新 |
22+ |
SMD |
104000 |
原装现货样品可售 |
询价 |
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