UPA892TD-T3中文资料瑞萨数据手册PDF规格书

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)

IN A 6-PIN LEAD-LESS MINIMOLD

FEATURES

• Ideal for low noise × high-gain amplification and oscillation at 3 GHz or over

NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

• Maximum available power gain: MAG = 12.5 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz

• High fT: fT = 21.0 GHz TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz

• 6-pin lead-less minimold package

• Built-in 2 transistors (2 ´ 2SC5668)