MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2723UT1A is N-channel MOSFET designed for low side device of synchronous rectifier DC/DC converter. FEATURES • Low on-state resistance RDS(on)1 = 2.5 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 3.5 mΩ MAX. (VGS = 4.5 V, ID = 17 A) • Thin type surface mount package with he

文件：349.97 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-Channel 30 V (D-S) MOSFET

文件：1.11174 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2723UT1A is N-channel MOSFET designed for low side device of synchronous rectifier DC/DC converter. FEATURES • Low on-state resistance RDS(on)1 = 2.5 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 3.5 mΩ MAX. (VGS = 4.5 V, ID = 17 A) • Thin type surface mount package with he

文件：349.97 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2723UT1A is N-channel MOSFET designed for low side device of synchronous rectifier DC/DC converter. FEATURES • Low on-state resistance RDS(on)1 = 2.5 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 3.5 mΩ MAX. (VGS = 4.5 V, ID = 17 A) • Thin type surface mount package with he

文件：349.97 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2723UT1A is N-channel MOSFET designed for low side device of synchronous rectifier DC/DC converter. FEATURES • Low on-state resistance RDS(on)1 = 2.5 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 3.5 mΩ MAX. (VGS = 4.5 V, ID = 17 A) • Thin type surface mount package with he

文件：349.97 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2723UT1A is N-channel MOSFET designed for low side device of synchronous rectifier DC/DC converter. FEATURES • Low on-state resistance RDS(on)1 = 2.5 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 3.5 mΩ MAX. (VGS = 4.5 V, ID = 17 A) • Thin type surface mount package with he

文件：349.97 Kbytes 页数：8 Pages

RENESAS

瑞萨