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UPA2352	文件：470.91 Kbytes Page：11 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheμPA2352isaDualN-channelMOSFETdesignedforLithium- Ionbatteryprotectioncircuit. EcologicallyFlipchipMOSFETforLithium-IonbatteryProtection (EFLIP). FEATURES •MonolithicDualMOSFET ConnectingtheDrainsonthecircuitboardisnotrequired becausetheDrains	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
UPA2352B	文件：440.62 Kbytes Page：9 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheμPA2352BisaDualN-channelMOSFETdesignedfor Lithium-Ionbatteryprotectioncircuit. EcologicallyFlipchipMOSFETforLithium-IonbatteryProtection (EFLIP). FEATURES •MonolithicDualMOSFET ConnectingtheDrainsonthecircuitboardisnotrequired becausetheDrain	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
UPA2352BT1G-E4-A	文件：440.62 Kbytes Page：9 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheμPA2352BisaDualN-channelMOSFETdesignedfor Lithium-Ionbatteryprotectioncircuit. EcologicallyFlipchipMOSFETforLithium-IonbatteryProtection (EFLIP). FEATURES •MonolithicDualMOSFET ConnectingtheDrainsonthecircuitboardisnotrequired becausetheDrain	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
UPA2352BT1P	文件：435.98 Kbytes Page：9 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheμPA2352BT1PisaDualN-channelMOSFETdesignedfor Lithium-Ionbatteryprotectioncircuit. EcologicallyFlipchipMOSFETforLithium-IonbatteryProtection (EFLIP). FEATURES •MonolithicDualMOSFET ConnectingtheDrainsonthecircuitboardisnotrequired becausetheDr	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
UPA2352BT1P-E4-A	文件：435.98 Kbytes Page：9 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheμPA2352BT1PisaDualN-channelMOSFETdesignedfor Lithium-Ionbatteryprotectioncircuit. EcologicallyFlipchipMOSFETforLithium-IonbatteryProtection (EFLIP). FEATURES •MonolithicDualMOSFET ConnectingtheDrainsonthecircuitboardisnotrequired becausetheDr	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
UPA2352T1G-E4-A	文件：470.91 Kbytes Page：11 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheμPA2352isaDualN-channelMOSFETdesignedforLithium- Ionbatteryprotectioncircuit. EcologicallyFlipchipMOSFETforLithium-IonbatteryProtection (EFLIP). FEATURES •MonolithicDualMOSFET ConnectingtheDrainsonthecircuitboardisnotrequired becausetheDrains	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
UPA2352T1P	文件：402.33 Kbytes Page：11 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheμPA2352T1PisaDualN-channelMOSFETdesignedfor Lithium-Ionbatteryprotectioncircuit. EcologicallyFlipchipMOSFETforLithium-IonbatteryProtection (EFLIP). FEATURES •MonolithicDualMOSFET ConnectingtheDrainsonthecircuitboardisnotrequired becausetheDra	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
UPA2352T1P-E4-A	文件：402.33 Kbytes Page：11 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheμPA2352T1PisaDualN-channelMOSFETdesignedfor Lithium-Ionbatteryprotectioncircuit. EcologicallyFlipchipMOSFETforLithium-IonbatteryProtection (EFLIP). FEATURES •MonolithicDualMOSFET ConnectingtheDrainsonthecircuitboardisnotrequired becausetheDra	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2352	文件：18.14 Kbytes Page：1 Pages	SolderTurretTerminalScrew	POMONA Pomona Electronics	POMONA
AIC2352	文件：211.64 Kbytes Page：12 Pages	700mASynchronousPWM/PSMStep-Down	AIC AIC	AIC
ALN2352	文件：323.05 Kbytes Page：3 Pages	InternallyMatchedLNAModule	ASB Advanced Semiconductor Business Inc.	ASB
ALN2352	文件：411.11 Kbytes Page：3 Pages	InternallyMatchedLNAModule	ASB Advanced Semiconductor Business Inc.	ASB
AN2352	文件：188.67 Kbytes Page：20 Pages	PLLjittereffectsonC-CANmodulesoftheST10F27x	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
CEH2352	文件：372.6 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 110V,2.3A,RDS(ON)=360mW@VGS=10V. RDS(ON)=420mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
EPA2352	文件：35.59 Kbytes Page：1 Pages	10Base-TInterfaceModule	PCA PCA Electronics, Inc.	PCA
HWS2352	文件：107.9 Kbytes Page：2 Pages	GaAsDC-2.0GHzSPDTTerminatedSwitch Description TheHWS2352isanintegratedGaAsSPDTterminatedswitch.Itissuitableforcellularphones,CT1,CT2,DECT,andWirelessLANapplications. Features •Non-ReflectiveType •HighIsolation •LowPowerConsumption •LowCostSurfaceMountSOP-8Package	HWHexawave, Inc Hexawave, Inc	HW
ISD2352	文件：627.51 Kbytes Page：16 Pages	SerialInputAlphanumericIndustrialDisplay	OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体	OSRAM
K2352	文件：60.8 Kbytes Page：2 Pages	FastSwitchingSpeed	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
LA2352M	文件：172.39 Kbytes Page：5 Pages	MonolithicLinearICForCar-LANTransceiverIC	SANYOSanyo 三洋三洋电机株式会社	SANYO
LFCN-2352+	文件：303.2 Kbytes Page：1 Pages	Millimeter-WaveLowPassFilters FEATURES •LTCCLowPassFiltersatmm-wavefrequency •PerfectlysuitedforWiFi,Bluetooth,ZigbeeApplications •Smallsize,1206 •RuggedLTCCconstruction •Excellentpowerhandling,upto1Watt •GoodRejection,35-40dBtyp. •Lowcost	MINIMini-Circuits 微型电路	MINI

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市莱克讯科技有限公司	UPA2352T1G-E4-A	NEC	2017+	4PINEFLIP	35565	深圳香港代理原装现货库存(美国-日本-台湾)可开正规增	询价
深圳市特顺芯科技有限公司	UPA2352T1G-E4-A	NEC		EFLIP	25000		询价
深圳市博浩通科技有限公司	UPA2352T1G-E4	NEC	23+	BGA	12000	全新原装优势	询价
深圳市科恒伟业电子有限公司	UPA2352BT1P-E4-A	RENESAS	1736+	SMD	8298	只做进口原装正品假一赔十!	询价
上海专毅电子科技有限公司	UPA2352T1G-E4-A	NEC	17+	EFLIP	9800	只做全新进口原装,现货库存	询价
深圳中芯器材有限公司	UPA2352BT1P-E4-A	RENESAS	09+	SMD	3098	原装现货	询价
深圳市华来深电子有限公司	UPA2352BT1G-E4	RENESAS	23+	SMD	8560	受权代理!全新原装现货特价热卖!	询价
深圳市华斯顿科技有限公司	UPA2352BT1P-E4-A	RENESAS	22+23+	BGA	21093	绝对原装正品全新进口深圳现货	询价
深圳市亚泰盈科电子有限公司	UPA2352BT1G4	NEC		BGA	30216	提供BOM表配单TEL:0755-83759919QQ:2355705587杜S	询价
深圳市福田区亿兴成电子商行	UPA2352T1G-E4-A	NEC	4PINEFLIP	6688	15	现货库存	询价

更多UPA2352供应商更新时间2024-5-17 8:29:00

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