P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1918 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.0 V driv

文件：71.41 Kbytes 页数：8 Pages

NEC

瑞萨

Old Company Name in Catalogs and Other Documents

DESCRIPTION The µPA1918 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.0 V dri

文件：206.84 Kbytes 页数：10 Pages

RENESAS

瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION\nThe µPA1918 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.FEATURES\n• 4.0 V drive av • 4.0 V drive available\n• Low on-state resistance\n  RDS(on)1= 143 mΩMAX. (VGS= –10 V, ID= –2.0 A)\n  RDS(on)2 = 179 mΩMAX. (VGS= –4.5 V, ID= –2.0 A)\n  RDS(on)3= 190 mΩMAX. (VGS= –4.0 V, ID= –2.0 A);

Renesas

瑞萨

P-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：455.06 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1918 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.0 V driv

文件：71.41 Kbytes 页数：8 Pages

NEC

瑞萨

Power MOSFETs for Automotive

Support is limited to customers who have already adopted these products.\n\nThe µPA1918 is a switching device, which can be driven directly by a 4. 0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power • 4.0 V drive available\n• Low on-state resistance RDS(on)1 = 143 mΩ MAX. (VGS = –10 V, ID = –2.0 A) RDS(on)2 = 179 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A) RDS(on)3 = 190 mΩ MAX. (VGS = –4.0 V, ID = –2.0 A);

Renesas

瑞萨