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ULQ2801A

EIGHT DARLINGTON ARRAYS

Description TheULQ2801A-ULQ2804AeachcontaineightDarlingtontransistorswithcommonemittersandintegralsuppressiondiodesforinductiveloads.EachDarlingtonfeaturesapeakloadcurrentratingof600mA(500mAcontinuous)andcanwithstandatleast50Vintheoffstate.Outputsmaybe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

ULQ2801A

Eight Darlington array

Description TheULQ2801A-ULQ2804AeachcontaineightDarlingtontransistorswithcommonemittersandintegralsuppressiondiodesforinductiveloads.EachDarlingtonfeaturesapeakloadcurrentratingof600mA(500mAcontinuous)andcanwithstandatleast50Vintheoffstate.Outputsmaybe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2801

42MHzsurfacemountbandpassfilter

GeneralDescription KR2801isa42MHzsurfacemountbandpassfilter.Thefilterhasaminimum3dBbandwidthof4MHz.Otherpassbandfrequenciesareavailable.Pleaseconsultthefactory. Features •42MHzCenterFrequency •SurfaceMountPackage •50ΩSourceandLoad

KRKR Electronics, Inc.

KR Electronics, Inc.

KR

2801P-R-ST

MultimodeCATVTransport

EMCORE

Emcore Corporation

EMCORE

2801P-R-ST

2801PRO5ChannelMultimodeCATVVSB/AMVideoLink

EMCORE

Emcore Corporation

EMCORE

2801P-R-ST

MultimodeCATVVSB/AM

EMCORE

Emcore Corporation

EMCORE

2801-SMA

42MHzCenterFrequency

KRKR Electronics, Inc.

KR Electronics, Inc.

KR

AAT2801

Multi-ModeChargePumpforWhiteLEDBacklightandFlashApplications

ANALOGICTECHAdvanced Analogic Technologies

研诺科技研诺逻辑科技有限公司

ANALOGICTECH

ACT2801

5V/1.5ABackupBatteryPackManager

ACTIVE-SEMI

Active-Semi International Inc.

ACTIVE-SEMI

ACT2801

5V/1.5ABackupBatteryPackManager

ACTIVE-SEMI

Active-Semi International Inc.

ACTIVE-SEMI

ACT2801CQL-T

5V/1.5ABackupBatteryPackManager

ACTIVE-SEMI

Active-Semi International Inc.

ACTIVE-SEMI

AON2801

DualP-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAON2801/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas1.8V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. AON2801andAON2801Lareelectricallyidentical. -RoHSCompli

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

APM2801B

P-ChannelEnhancementModeMOSFETwithSchottkyDiode

Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE

ANPECAnpec Electronics Corp

茂达电子

ANPEC

APM2801BC-TR

P-ChannelEnhancementModeMOSFETwithSchottkyDiode

Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE

ANPECAnpec Electronics Corp

茂达电子

ANPEC

APM2801BC-TRL

P-ChannelEnhancementModeMOSFETwithSchottkyDiode

Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE

ANPECAnpec Electronics Corp

茂达电子

ANPEC

APM2801BC-TU

P-ChannelEnhancementModeMOSFETwithSchottkyDiode

Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE

ANPECAnpec Electronics Corp

茂达电子

ANPEC

APM2801BC-TUL

P-ChannelEnhancementModeMOSFETwithSchottkyDiode

Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE

ANPECAnpec Electronics Corp

茂达电子

ANPEC

ASIKV2801

SILICONHYPERABRUPTTUNINGVARACTOR

ASI

Advanced Semiconductor, Inc

ASI

BGA2801

MMICwidebandamplifier

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

BGA2801

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

详细参数

  • 型号:

    ULQ2801A

  • 功能描述:

    达林顿晶体管 Eight NPN Array

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶体管极性:

    NPN 集电极—发射极最大电压

  • VCEO:

    50 V 发射极 - 基极电压

  • VEBO:

    集电极—基极电压

  • 最大直流电集电极电流:

    0.5 A

  • 最大工作温度:

    + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOIC-18

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
STMicroelectronics
23+
18-DIP(0.300,7.62mm)
30000
晶体管-分立半导体产品-原装正品
询价
ST
D/C
DIP
70
特价热销现货库存100%原装正品欢迎来电订购!
询价
ST
00+/01+
DIP18
101
全新原装100真实现货供应
询价
STM
23+
DIP
7800
全新原装正品,现货销售
询价
ST
08+
DIP-18
1080
询价
ST
23+
DIP
12335
询价
STM
1718+
DIP18
7500
只做原装进口,假一罚十
询价
ST
2020+
DIP18
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
STMicroelectronics
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
STM
21+
DIP
6000
绝对原裝现货
询价
更多ULQ2801A供应商 更新时间2024-4-26 20:22:00