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UM2110

ATTENUATORANDPOWERPINDIODES2??30MHz

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UM2110

PINDIODE

DESCRIPTION UM2100SeriesPINdiodesaredesignedfortransmit/receiveswitchandattenuatorapplicationsinHFband(2-30MHz)andbelow.Asseriesconfiguredswitches,theselonglifetime(25μstypical)diodescancontrolupto2.5kW,CWina50ohmsystem.InHFband,insertionlossisless

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UM2110B

ProductChangeNotification

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

UM2110C

ProductChangeNotification

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

UN2110

SiliconPNPepitaxialplanertransistor

SiliconPNPepitaxialplanartype Fordigitalcircuits ■Features •Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts •Minitypepackageallowingeasyautomaticinsertionthroughtape packingandmagazinepacking

PanasonicPanasonic Semiconductor

松下松下电器

UNR2110

SiliconPNPepitaxialplanartype

SiliconPNPepitaxialplanartype Fordigitalcircuits ■Features •Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts •Minitypepackageallowingeasyautomaticinsertionthroughtape packingandmagazinepacking

PanasonicPanasonic Semiconductor

松下松下电器

UPG2110TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheµPG2106TBandµPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheµPG2106TBis

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPG2110TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION NECsUPG2110TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES •LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V, fRF=1850to1910MHz

CEL

California Eastern Labs

UTCM2110

LINEARINTEGRATEDCIRCUIT

UTCUnisonic Technologies

友顺友顺科技股份有限公司

V2110B

Finger-shapedheatsinkTO-126

ASSMANN

ASSMANN WSW COMPONENTS

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