UCQ5818EPF

BiMOS II 32-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS FOR -40 C TO 85 C OPERATION

BiMOSII32-BITSERIAL-INPUT,LATCHEDSOURCEDRIVERSFOR-40°CTO+85°COPERATION Designedprimarilyforusewithvacuum-fluorescentdisplays,theUCQ5818AFandUCQ5818EPFsmartpowerBiMOSIIdriverscombineCMOSshiftregisters,datalatches,andcontrolcircuitry,withbipolarhighspeedsourci

5818-F

BiMOSII32-BITSERIAL-INPUT,LATCHEDSOURCEDRIVERSFOR-40CTO85COPERATION

BiMOSII32-BITSERIAL-INPUT,LATCHEDSOURCEDRIVERSFOR-40°CTO+85°COPERATION Designedprimarilyforusewithvacuum-fluorescentdisplays,theUCQ5818AFandUCQ5818EPFsmartpowerBiMOSIIdriverscombineCMOSshiftregisters,datalatches,andcontrolcircuitry,withbipolarhighspeedsourci

5818-F

BiMOSII32-BITSERIAL-INPUT,LATCHEDSOURCEDRIVERSWITHACTIVE-DMOSPULL-DOWNS

Designedprimarilyforusewithvacuum-fluorescentdisplays,theUCN5818AFandUCN5818EPFsmartpowerBiMOSIIdriverscombineCMOSshiftregisters,datalatches,andcontrolcircuitry,withbipolarhighspeedsourcingoutputsandDMOSactivepull-downcircuitry.Thehighspeedshiftregisterandda

5818SM

1AmpSchottkyRectifier

1AmpSchottkyRectifier •SchottkyBarrierRectifier •GuardRingProtection •LowForwardVoltage •HighReliability •HighCurrentCapability

5818SMG

1AmpSchottkyRectifier

1AmpSchottkyRectifier •SchottkyBarrierRectifier •GuardRingProtection •LowForwardVoltage •HighReliability •HighCurrentCapability •SurfaceMountPackage

5818SMJ

1AmpSchottkyRectifier

1AmpSchottkyRectifier •UnderwritersLaboratoryFlammabilityClass94V-0 •SchottkyBarrierRectifier •Guardringprotection •Lowforwardvoltage •Lowthermalresistancerating

AFE5818

16-Channel,Ultrasound,AnalogFront-End

AFE5818ZBV

80-MSPSADC,PassiveCWMixer,I/QDemodulator

AFE5818ZBV

16-Channel,Ultrasound,AnalogFront-End

B5818LWS

1AmpLowVFSchottkyBarrierRectifier30Volts

B5818PL

SchottkyBarrierDiodes

B5818PL

SOD-123FLPlastic-EncapsulateDiodes

Features 1A VRRM Highsurgecurrentcapability Polarity:Colorbanddenotescathode IF(AV) 20-40V Applications Rectifier

B5818W

SCHOTTKYBARRIERRECTIFIERS

ReverseVoltage-20to40V ForwardCurrent-1A FEATURES ♦Metalsiliconjunction,majoritycarrierconduction ♦Guardingforovervoltageprotection ♦Lowpowerloss,highefficiency ♦Highcurrentcapability ♦lowforwardvoltagedrop ♦Highsurgecapability ♦Foruseinlowvoltage,

B5818W

SOD-123Plastic-EncapsulateSchottkyBarrierDiode

Features HighCurrentCapability LowForwardVoltageDrop P/NsuffixVmeansAEC-Q101qualified,e.g:B5817WV P/NsuffixVmeansHalogen-free

B5818W

SCHOTTKYDIODESSCHOTTKYBARRIERDIODE

DESCRIPTION The B5817W~B5819WareavailableinSOD123 package FEATURES Foruseinlowvoltage,highfrequencyinverters Freewheeling,andpolarityprotection applications AvailableinSOD123package MECHANICALDATA Case: Moldedplasticbody Terminals: Platedleadsso

B5818W

Plastic-EncapsulateDiodes

SCHOTTKYBARRIERDIODES FEATURES Foruseinlowvoltage,highfrequencyinverters Freewheeling,andpolarityprotectionapplications.

B5818W

SCHOTTKYDIODE

FEATURES ♦Foruseinlowvoltage,highfrequencyinverters ♦Freewheeling,andpolantyprotectionapplications MECHANICALDATA Case:Moldedplasticbody Terminals:PlatedleadssolderableperMIL-STD-750,Method2026 Polarity:Polaritysymbolsmarkedoncase Marking:B5817W:SJ

B5818W

SCHOTTKYBARRIERRECTIFIER

VOLTAGE20THRU200VoltsCURRENT1.0Ampers FEATURES ●HighCurrentCapability ●LowForwardVoltageDrop MECHANICALDATA ●SOD-123SmallOutlinePlasticPackage ●Polarity:Colorbanddenotescathodeend ●EpoxyUL:94V-0 ●MountingPosition:Any

B5818W

Plastic-EncapsulateDiodes

SCHOTTKYDIODES Features: Lowforwardvoltage; Applications: Low-voltage,high-frequencyandotherprotectioncircuits.

B5818W

SchottkyBarrierDiode

FEATURES ●ExtremelylowVF. ●Lowstoredchange,majoritycarrierconduction. ●Lowpowerloss/highefficient APPLICATIONS ●ForUseInLowVoltage,HighFrequencyInverters. ●FreeWheeling,AndPolarityProtectionApplications.