零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
CeleronMProcessoron90nmProcess | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | Intel | ||
SUBMINIATUREFUSES | LittelfuseLittelfuse Inc. 力特力特公司 | Littelfuse | ||
HighPerformanceBoxSealingTape | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | 3M | ||
Workhorseclampwithincreasedperformanceandflexibility | FLUKEFluke Corporation 福禄克公司 | FLUKE | ||
Mini-ClampSocket •Designedtoaccommodatetypicalwiringspecificationsper JapaneseandAsiansuppliers •LatchesavailableforPanelMountapplications •Nospecialwirepreparation •Integratedcableretention •Designacceptsmultiplewiresizediameters •Easy,quick,andreliableIDCterminationusing | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | 3M | ||
OCTALD-TYPETRANSPARENTLATCHESWITH3-STATEOUTPUTS | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
RadiationHardenedOctalTransparentLatch,Three-State Description TheIntersilACS373MSisaradiationhardenedoctaltransparentlatchwiththree-stateoutputs.Theoutputsaretransparenttotheinputswhenthelatchenable(LE)ishigh.WhentheLEgoeslow,thedataislatched.WhentheOutputEnable(OE)ishigh,theoutputsareinthehighimp | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalTransparentLatch,Three-State Features •1.25MicronRadiationHardenedSOSCMOS •TotalDose300KRAD(Si) •SingleEventUpset(SEU)Immunity 80MEV-cm2/mg •DoseRateUpset>1011RAD(Si)/s,20nsPulse •Latch-UpFreeUnderAnyConditions •MilitaryTemperatureRa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalTransparentLatch,Three-State Features •1.25MicronRadiationHardenedSOSCMOS •TotalDose300KRAD(Si) •SingleEventUpset(SEU)Immunity 80MEV-cm2/mg •DoseRateUpset>1011RAD(Si)/s,20nsPulse •Latch-UpFreeUnderAnyConditions •MilitaryTemperatureRa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalTransparentLatch,Three-State Description TheIntersilACS373MSisaradiationhardenedoctaltransparentlatchwiththree-stateoutputs.Theoutputsaretransparenttotheinputswhenthelatchenable(LE)ishigh.WhentheLEgoeslow,thedataislatched.WhentheOutputEnable(OE)ishigh,theoutputsareinthehighimp | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalTransparentLatch,Three-State Description TheIntersilACS373MSisaradiationhardenedoctaltransparentlatchwiththree-stateoutputs.Theoutputsaretransparenttotheinputswhenthelatchenable(LE)ishigh.WhentheLEgoeslow,thedataislatched.WhentheOutputEnable(OE)ishigh,theoutputsareinthehighimp | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalTransparentLatch,Three-State Features •1.25MicronRadiationHardenedSOSCMOS •TotalDose300KRAD(Si) •SingleEventUpset(SEU)Immunity 80MEV-cm2/mg •DoseRateUpset>1011RAD(Si)/s,20nsPulse •Latch-UpFreeUnderAnyConditions •MilitaryTemperatureRa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalTransparentLatch,Three-State Features •1.25MicronRadiationHardenedSOSCMOS •TotalDose300KRAD(Si) •SingleEventUpset(SEU)Immunity 80MEV-cm2/mg •DoseRateUpset>1011RAD(Si)/s,20nsPulse •Latch-UpFreeUnderAnyConditions •MilitaryTemperatureRa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalTransparentLatch,Three-State Description TheIntersilACS373MSisaradiationhardenedoctaltransparentlatchwiththree-stateoutputs.Theoutputsaretransparenttotheinputswhenthelatchenable(LE)ishigh.WhentheLEgoeslow,thedataislatched.WhentheOutputEnable(OE)ishigh,theoutputsareinthehighimp | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalTransparentLatch,Three-State Description TheIntersilACS373MSisaradiationhardenedoctaltransparentlatchwiththree-stateoutputs.Theoutputsaretransparenttotheinputswhenthelatchenable(LE)ishigh.WhentheLEgoeslow,thedataislatched.WhentheOutputEnable(OE)ishigh,theoutputsareinthehighimp | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalTransparentLatch,Three-State Features •1.25MicronRadiationHardenedSOSCMOS •TotalDose300KRAD(Si) •SingleEventUpset(SEU)Immunity 80MEV-cm2/mg •DoseRateUpset>1011RAD(Si)/s,20nsPulse •Latch-UpFreeUnderAnyConditions •MilitaryTemperatureRa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalTransparentLatch,Three-State Features •1.25MicronRadiationHardenedSOSCMOS •TotalDose300KRAD(Si) •SingleEventUpset(SEU)Immunity 80MEV-cm2/mg •DoseRateUpset>1011RAD(Si)/s,20nsPulse •Latch-UpFreeUnderAnyConditions •MilitaryTemperatureRa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalTransparentLatch,Three-State Description TheIntersilACS373MSisaradiationhardenedoctaltransparentlatchwiththree-stateoutputs.Theoutputsaretransparenttotheinputswhenthelatchenable(LE)ishigh.WhentheLEgoeslow,thedataislatched.WhentheOutputEnable(OE)ishigh,theoutputsareinthehighimp | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalTransparentLatch,Three-State Description TheIntersilACTS373MSisaradiationhardenedoctaltransparentlatchwiththree-stateoutputs.Theoutputsaretransparenttotheinputswhenthelatchenable(LE)ishigh.WhentheLEgoeslow,thedataislatched.WhentheOutputEnable(OE)ishigh,theoutputsareinthehighim | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalTransparentLatch,Three-State Features •1.25MicronRadiationHardenedSOSCMOS •TotalDose300KRAD(Si) •SingleEventUpset(SEU)Immunity 80MEV-cm2/mg •DoseRateUpset>1011RAD(Si)/s,20nsPulse •Latch-UpFreeUnderAnyConditions •MilitaryTemperatureRa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI |
23+ |
原厂封装 |
6061 |
原装现货 |
询价 | ||
国产 |
23+ |
SOP |
5000 |
原装正品,假一罚十 |
询价 | ||
ST |
23+ |
SOP |
8000 |
原装正品 |
询价 | ||
ON/安森美 |
DIP-8 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
22+ |
SOP |
7500 |
绝对原装自家现货!真实库存!欢迎来电! |
询价 | |||
15+ |
SOP28 |
13 |
全新原装正品现货 |
询价 | |||
UC |
23+ |
SOP |
225 |
询价 | |||
TI/TEXAS |
23+ |
SMD |
8931 |
询价 | |||
UC |
98 |
SMD |
65 |
自己公司全新库存绝对有货 |
询价 | ||
UC |
23+ |
SOP28 |
1006 |
全新原装现货 |
询价 |
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