Half-bridge driver IC

文件：587.88 Kbytes 页数：15 Pages

PHI

飞利浦

ULTRA FAST RECOVERY RECTIFIERS

文件：129.62 Kbytes 页数：2 Pages

Microsemi

美高森美

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an

文件：155.16 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an

文件：79.21 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司