首页 >U10A50R>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType OfficialSite:http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en •Lowdrain-sourceON-resistance:RDS(ON)=0.62Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=5.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=500 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SCHOTTKYBARRIERRECTIFIERS(10A,30-60V) SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestat-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingand | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
SCHOTTKYBARRIERRECTIFIER VOLTAGERANGE30-60VoltsCURRENT10Amperes FEATURES *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *MetalSiliconjunction,majoritycarrierconduction *Lowpowerloss,highefficiency *Highcurrentcapability,lowforwardvoltagedrop *Guardringforo | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.72Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType OfficialSite:http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en •Lowdrain-sourceON-resistance:RDS(ON)=0.62Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=5.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=500 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconN-ChannelMOS Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
FASTRECTIFIERS(10A,300-600V) UltraFastRecoveryRectifierDiodes ULTRAFASTRECTIFIERS10AMPERES300--600VOLTS | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC |
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