首页 >TZ2711A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2711GRisP-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationsofnotebook computersandLi-ionbatteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=9mΩMAX.(VGS=−10V,ID=−6.5A) RDS(on)2=15mΩMAX.(VGS=−4.5V, | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGP-CHANNELPOWERMOSFET | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
3GHzSILICONMMICWIDE-BANDAMPLIFIER DESCRIPTION TheUPC2708TandUPC2711TareSiliconMonolithicintegratedcircuitsmanufacturedusingtheNESATIIIprocess.Thesedevicesaresuitableasbufferamplifiersforwide-bandapplications.Theyaredesignedforlowcostgainstagesincellularradios,GPSreceivers,DBStuners,PCN,and | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
2.9GHzWIDEBANDAMPLIFIERSILICONBIPOLARMONOLITHICINTEGRATEDCIRCUIT DESCRIPTION TheUPC2708TandUPC2711TareSiliconMonolithicintegratedcircuitsmanufacturedusingtheNESATIIIprocess.Thesedevicesaresuitableasbufferamplifiersforwide-bandapplications.Theyaredesignedforlowcostgainstagesincellularradios,GPSreceivers,DBStuners,PCN,and | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
3.3V,SILICONGERMANIUMMMICWIDEBANDAMPLIFIER | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
5V,SUPERMINIMOLDSILICONMMICWIDEBANDAMPLIFIER | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
5V,SUPERMINIMOLDSILICONMMICWIDEBANDAMPLIFIER | CEL California Eastern Labs | CEL | ||
BIPOLARANALOGINTEGRATEDCIRCUIT | CEL California Eastern Labs | CEL | ||
5V,SUPERMINIMOLDSILICONMMICWIDEBANDAMPLIFIER | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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