首页 >TTY6106>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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2/2or3/2wayPneumatic-Rocker-SolenoidValve Thedirect-actingrockersolenoidvalvetype6106isdesignedforuseonneutral gaseousmediums.Theheatinputinthemediumisminimal,becausethe housingisseparatedfromthecoilbyastainlesssteelplate.Thevalvescan bemounteddirectlyoralsosingleormanifoldmounted.Theyareu | BURKERTChristian Bürkert GmbH & Co. KG 宝帝流体控制系统宝帝流体控制系统（上海）有限公司 | BURKERT | ||
THEBREADBOARDINGMEDIUMFORSURFACEMOUNT | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
DMMRFDetectorTestProbe | POMONA Pomona Electronics | POMONA | ||
ACFilmCapacitorsLighting Features ■Self-healingproperties ■Lowdissipationfactor ■Highinsulationresisitance Construction ■Dielectric:polypropylenefilm ■Aluminiumcan ■Softpolyurethanresin ■Internaldischageresistor ■Overpressuredisconnector Typicalapplications Forgeneralsinewaveapplicat | EPCOSepcos 爱普科斯 | EPCOS | ||
PCS/CDMA3.5V/28.5dBmLinearPowerAmplifierModule PRODUCTDESCRIPTION TheAWT6106isa3.5V(3.0Vto4.2V)highpower,highefficiency,threestagepoweramplifiermoduleforDualModeCDMA/PCSwirelesshandsets.ThedeviceismanufacturedonanadvancedInGaPHBTMMICtechnologyofferingstate-of-the-artreliability,temperaturestability,a | ANADIGICS ANADIGICS, Inc | ANADIGICS | ||
HomePhoneNetworkingTransformer | pulse Pulse A Technitrol Company | pulse | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■57V,56A,RDS(ON)=19mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 57V,56A,RDS(ON)=19mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 57V,56A,RDS(ON)=19mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■57V,56A,RDS(ON)=19mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET |
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