首页 >TTI5870>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Commonsupplymanifold | FESTOFesto Corporation. 费斯托 | FESTO | ||
WidebandwidthanalogswitchIC ■Overview TheAN5870KisawidebandwidthanalogswitchICof300MHzoperation.ItisusableforRGBsignalandhorizontal/verticalsynchronizingsignals,andithasabuilt-in75Ωdriverforvideosignal.Inaddition,ithasalsorealizedahighspeedoperationbytheadoptionofCMOSprocess | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
WidebandwidthanalogswitchIC ■Overview TheAN5870KisawidebandwidthanalogswitchICof300MHzoperation.ItisusableforRGBsignalandhorizontal/verticalsynchronizingsignals,andithasabuilt-in75Ωdriverforvideosignal.Inaddition,ithasalsorealizedahighspeedoperationbytheadoptionofCMOSprocess | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
Worldwideinput,andbuiltinPFCACinput,andisolatedHigh-powerLEDDriverforIllumination Worldwideinput,andbuiltinPFC ACinput,andisolatedHigh-powerLEDDriverforIllumination | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
N-ChannelSiliconMOSFET,SchottkyBarrierDiode,General-PurposeSwitchingDeviceApplications MOSFET:N-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypewithaN-channelsilliconMOSFETandaschottkybarrierdiodecontainedinonepackagefacilitatinghigh-densitymounting. •[MOSFET] •LowON-resistance •Ultrahigh-speedswitching •2.5Vdriv | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
SiliconPowerRectifierDiode,12Amp,DO4 Description: TheNTE5810,NTE5811,andNTE5870throughNTE5891arelowpowergeneralpurposerectifierdiodesinaDO4typepackagedesignedforbatterychargers,converters,powersupplies,andmachinetoolcontrols. Features: •HighSurgeCurrentCapability •HighVoltageAvailable | NTE NTE Electronics | NTE | ||
SiliconPowerRectifierDiode,12Amp,DO4 Description: TheNTE5810,NTE5811,andNTE5870throughNTE5891arelowpowergeneralpurposerectifierdiodesinaDO4typepackagedesignedforbatterychargers,converters,powersupplies,andmachinetoolcontrols. Features: •HighSurgeCurrentCapability •HighVoltageAvailable | NTE NTE Electronics | NTE | ||
SiliconPowerRectifierDiode,12Amp Description: TheNTE5810,NTE5811,andNTE5870throughNTE5891arelowpowergeneralpurposerectifierdiodesinaDO4typepackagedesignedforbatterychargers,converters,powersupplies,andmachinetoolcontrols. Features: •HighSurgeCurrentCapability •HighVoltageAvailable | NTE NTE Electronics | NTE | ||
Multi-elementphotodiodesforsurfacemounting | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | HAMAMATSU | ||
PhotoTransistor Features •Lensedforhighsensitivity •φ5mm(T-13/4)allplasticmoldtype •Highreliabilityandstablecharacteristics •Visiblelightcut-offtype •Withbaseterminal | AUK AUK corp | AUK |
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