Very high accuracy (5 μV) high bandwidth (10 MHz) zero drift 5 V op amp

Features • Very high accuracy and stability: offset voltage – 5 μV max. at 25 °C – 8 μV over the full temperature range (-40 °C to 125 °C) • Rail-to-rail input and output • Low supply voltage: 2.5 - 5.5 V • Low power consumption: 1.5 mA at 5 V • Gain-bandwidth product: 10 MHz • AEC-Q100 au

文件：826.8 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：K250；Package：SOT23-5；Very high accuracy (5 μV) high bandwidth (10 MHz) zero drift 5 V op amp

Features • Very high accuracy and stability: offset voltage – 5 μV max. at 25 °C – 8 μV over the full temperature range (-40 °C to 125 °C) • Rail-to-rail input and output • Low supply voltage: 2.5 - 5.5 V • Low power consumption: 1.5 mA at 5 V • Gain-bandwidth product: 10 MHz • AEC-Q100 au

文件：826.8 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：K251；Package：SOT23-5；Very high accuracy (5 μV) high bandwidth (10 MHz) zero drift 5 V op amp

Features • Very high accuracy and stability: offset voltage – 5 μV max. at 25 °C – 8 μV over the full temperature range (-40 °C to 125 °C) • Rail-to-rail input and output • Low supply voltage: 2.5 - 5.5 V • Low power consumption: 1.5 mA at 5 V • Gain-bandwidth product: 10 MHz • AEC-Q100 au

文件：826.8 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD

文件：565.86 Kbytes 页数：9 Pages

NEC

瑞萨

NPN SiGe RF ANALOG INTEGRATED CIRCUIT

NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD DESCRIPTION The μPA901TU is a silicon germanium HBT IC designed for the power amplifier of 5.8 GHz cordless phone and other 5.8 GHz applications. This IC consists of two stage amplifiers and has excellent performance, high efficiency, high gain,

文件：304.86 Kbytes 页数：12 Pages

RENESAS

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NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD

文件：565.86 Kbytes 页数：9 Pages

NEC

瑞萨