BSH299

P-channelenhancementmodeMOStransistor

DESCRIPTION P-channelenhancementmodeMOStransistorinaSOT363SMDpackage. FEATURES •Lowthresholdvoltage •High-speedswitching •Nosecondarybreakdown •DirectinterfacetoC-MOS,TTL,etc. APPLICATIONS •Powermanagement •Batterypoweredapplicationse.g.cellularphones •Gen

BSP299

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeAvalancherated)

SIPMOS®Small-SignalTransistor •Nchannel •Enhancementmode •Avalancherated •VGS(th)=2.1...4.0V

BSP299

SIPMOSSmall-SignalTransistor

SIPMOS®Small-SignalTransistor •Nchannel •Enhancementmode •Avalancherated •VGS(th)=2.1...4.0V •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoAECQ101 •Halogen­freeaccordingtoIEC61249­2­21

BSP299

SIPMOSSmall-SignalTransistor

BY299

FASTRECOVERYPLASTICRECTIFIER

FEATURE •Fastswitching •Highcurrentcapability •Lowforwardvoltagedrop •Lowpowerloss,highefficiency •Highsurgecapability •Hightemperaturesolderingguaranteed260°C/10sec/0.375leadlengthat5lbstension

BY299

Fastsiliconrectifierdiodes

BY299

2.0AMPS.FastRecoveryRectifiers

VoltageRange100to800VoltsCurrent2.0Amperes Features ◇Lowforwardvoltagedrop ◇Highcurrentcapability ◇Highreliability ◇Highsurgecurrentcapability

BY299

Fastsiliconrectifierdiodes

ForwardCurrent:2A ReverseVoltage:100to800V Features •Max.soldertemperture:260°C •PlasticmeterialhasULclassification94V-0

BY299

FastSiliconRectifiers

Features ComplianttoRoHS,REACH,ConflictMinerals1) TypicalApplication Rectificationofmediumfrequencies,SnubberorBootstrapdiodesCommercialgrade1) MechanicalData1) Tapedinammopack1700 Weightapprox.1g CasematerialUL

BY299

CURRENT2.0AmperesVOLTAGE100to1000Volts

Features •PlasticpackagehasUnderwritesLaboratoryFlammabilityClassification94V-0 •Fastswitchingspeed •Diffusedjunction •Highcurrentcapability •Hightemperaturesolderingguaranteed:250℃/10seconds,0.375(9.5mm)leadlength,5lbs.(2.3kg)tension.