首页 >TSS650RJ>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HIGH-SPEEDTRANSIENTSURGEPROTECTORS | Clare Clare, Inc. | Clare | ||
MOSFIELDEFFECTTRANSISTOR P-CHANNELMOSFIELDEFFECTTRANSISTOR FORSWITCHING FEATURES •1.8Vdriveavailable •Lowon-stateresistance RDS(on)1=50mΩMAX.(VGS=−4.5V,ID=−2.5A) RDS(on)2=68mΩMAX.(VGS=−2.5V,ID=−2.5A) RDS(on)3=114mΩMAX.(VGS=−1.8V,ID=−1.5A) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
P-Channel20V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitchforPortableDevices -CellularPhone -DSC -PortableGameConsole -MP3 -GPS | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-CHANNELMOSFIELDEFFECTTRANSISTORFORSWITCHING DESCRIPTION TheµPA650TTisaswitchingdevice,whichcanbedrivendirectlybya1.8Vpowersource. Thisdevicefeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •1.8Vdr | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
POWERSCHOTTKYRECTIFIERS POWERSCHOTTKYRECTIFIERS | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
DUALPOWERSCHOTTKYRECTIFIERS DUALPOWERSCHOTTKYRECTIFIERS | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
STANDARDTHROUGHHOLEVCXO(20.7x13.1x7.5mm) FEATURES WIDEFREQUENCYRANGE WIDEPULLABILITYRANGE/LOWCURRENT CMOS/TTL/SINEWAVEOUTPUT FASTDELIVERY | Transko Transko Electronics, Inc. | Transko | ||
AC-DCPowerSupplies | TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司 | TDK | ||
HighPassFilters850to7000MHz | MINI Mini-Circuits | MINI | ||
LowPassFilterDCto650MHz(40dBIsolationupto20GHz) | MINI Mini-Circuits | MINI |
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