| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
TSM2312CX | 20V N-Channel Enhancement Mode MOSFET | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | |
20V P-Channel MOSFET | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
N-Channel 20 V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
20V N-Channel MOSFET | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
20V N-Channel MOSFET | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
BandpassFilter | KRKR Electronics, Inc. KR Electronics, Inc. | KR | ||
Pneumaticmuffler | FESTOFesto Corporation. 费斯托公司德国FESTO费斯托（中国）有限公司 | FESTO | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductorsHorizontalorverticalmount | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
PhotoelectronicSmokedetectorwithElectronicHeatSensing | SYSTEMSENSORSystemsensor advanced ideas. Systemsensor advanced ideas. | SYSTEMSENSOR | ||
MOSFET20VN-CHANNELENHANCEMENTMODE DESCRIPTION TheAM2312isavailableinSOT-23Spackage. FEATURES VDS=20V RDS(ON),VGS@4.5V,IDS@5.0A=41mΩ RDS(ON),VGS@2.5V,IDS@4.5A=47mΩ Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance Capableof2.5Vgatedrive Loweron-resistanc | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
N-Channel20-V(D-S)MOSFET | AnalogPower Analog Power | AnalogPower | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
N-ChannelEnhancementModeMOSFET Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
Plastic-EncapsulateMOSFETS FEATURE TrenchFETPowerMOSFET APPLICATION DC/DCConverters LoadSwitchingforPortableApplications | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 | GWSEMI |
详细参数
- 型号：
TSM2312CX
- 功能描述：
MOSFET 20V N channel MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TSC/台半 |
23+ |
SOT-23 |
45000 |
热卖优势现货 |
询价 | ||
TSC |
16+ |
SOT-23 |
16550 |
进口原装现货/价格优势! |
询价 | ||
TSC |
22+ |
SOT-23 |
13568 |
实力现货,随便验! |
询价 | ||
TSC/台湾半导体 |
2019+PB |
SOT-23 |
99600 |
原装正品 可含税交易 |
询价 | ||
TaiwanSemi |
22+ |
135000 |
终端工厂库存实单来谈 |
询价 | |||
TSC/台湾半导体 |
SOT23 |
7906200 |
询价 | ||||
TSC |
23+ |
. |
53000 |
原装正品现货 |
询价 | ||
23+ |
N/A |
49500 |
正品授权货源可靠 |
询价 | |||
TSC |
2002 |
SOT-23 |
65000 |
原装正品假一罚万 |
询价 | ||
TSC |
2013+PB |
SOT-23 |
16550 |
百分百原装正品现货 |
询价 |
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