首页 >TSFH6210>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HighSpeedInfraredEmittingDiode,890nm,GaAlAsDoubleHetero | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighSpeedInfraredEmittingDiode,890nm,GaAlAsDoubleHetero DESCRIPTION TSHF6210isaninfrared,890nmemittingdiodeinGaAlAs doublehetero(DH)technologywithhighradiantpowerand highspeed,moldedinaclear,untintedplasticpackage. FEATURES •Packagetype:leaded •Packageform:T-1¾ •Dimensions(inmm):Ø5 •Peakwavelength:λp=8 | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighSpeedInfraredEmittingDiode,890nm,GaAlAsDoubleHetero | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighSpeedInfraredEmittingDiode,850nm,GaAlAsDoubleHetero | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighSpeedInfraredEmittingDiode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighSpeedInfraredEmittingDiode,850nm,GaAlAsDoubleHetero | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighSpeedInfraredEmittingDiode,RoHSCompliant,850nm,GaAlAsDoubleHetero | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighSpeedInfraredEmittingDiode,850nm,GaAlAsDoubleHetero DESCRIPTION TSHG6210isaninfrared,850nmemittingdiodeinGaAlAs doublehetero(DH)technologywithhighradiantpowerand highspeed,moldedinaclear,untintedplasticpackage. FEATURES •Packagetype:leaded •Packageform:T-1¾ •Dimensions(inmm):Ø5 •Peakwavelength:λp=8 | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconNPNepitaxialplanertransistor SiliconNPNepitaxialplanertransistor Fordigitalcircuits ■Features ●Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts. ●MT-1typepackage,allowingsupplywiththeradialtaping. | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
HighCurrent,HighSpeedLDORegulators | TOREXTorex Semiconductor 特瑞仕特瑞仕半导体株式会社 | TOREX |
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