首页 >TSFF5510-CSZ>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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HighSpeedInfraredEmittingDiode,830nm,GaAlAsDoubleHetero DESCRIPTION TSHG5510isaninfrared,830nmemittingdiodeinGaAlAs doublehetero(DH)technologywithhighradiantpowerand highspeed,moldedinaclear,untintedplasticpackage. FEATURES •Packagetype:leaded •Packageform:T-1¾ •Dimensions(inmm):Ø5 •Leadswithstand-off • | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighSpeedInfraredEmittingDiode,830nm,GaAlAsDoubleHetero | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighSpeedInfraredEmittingDiode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighSpeedInfraredEmittingDiode,830nm,GaAlAsDoubleHetero | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
LowVoltageDifferentialLVD/SESCSI9LineTerminator | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
LittelfuseoffersFlagTerminalprobehousingssuitableforawiderangeoftemperaturesensingapplications | Littelfuselittelfuse 力特力特公司 | Littelfuse | ||
ElectricalSpecificationsat25oC ZenerDiodes ElectricalSpecificationsat25°C | AMMSEMIAmerican Microsemiconductor 美国微半导体有限公司 | AMMSEMI | ||
ProximitySensorsCapacitiveLevelDetector,FlatPackPolycarbonateHousing | CARLOGAVAZZI Carlo Gavazzi Holding AG | CARLOGAVAZZI | ||
ProximitySensorsCapacitiveLevelDetector,FlatPackPolycarbonateHousing | CARLOGAVAZZI Carlo Gavazzi Holding AG | CARLOGAVAZZI | ||
Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安纳森半导体安纳森半导体香港有限公司 | ANASEM |
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