首页 >TSA1204T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AluminumCapacitors85C,Miniature,AxialLead FEATURES •Lowleakagecurrent •Longshelflife •IdealforapplicationinTVsets,autoradios,radio-phonecombinations,electronictestingequipment •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
CrystalUnitSMD2.5x2.026.0MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
ESDArraySeries | UNSEMIUN Semiconducctor INC 优恩半导体深圳市优恩半导体有限公司 | UNSEMI | ||
N-Channel200V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •100RgandUISTested •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel200V(D-S)MOSFET FEATURES •175°CJunctionTemperature •PWMOptimized •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch •DT-TrenchPowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel200-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFETS •175°CJunctionTemperature •100RgandUISTested APPLICATIONS •PowerSupply •LightingSystems | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancement-ModeVerticalDMOSPowerFETs??? ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | SUTEX Supertex, Inc | SUTEX | ||
P-ChannelEnhancement-ModeVerticalDMOSPowerFETs???
| SUTEX Supertex, Inc | SUTEX | ||
12(168(7x24)/34)AWGBareCopper | ALPHAWIREAlpha Wire 阿尔法电线 | ALPHAWIRE | ||
12(168(7x24)/34)AWGBareCopper | ALPHAWIREAlpha Wire 阿尔法电线 | ALPHAWIRE |
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