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CED655

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■150V,6.4A,RDS(ON)=0.45Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CED655

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 150V,6.4A,RDS(ON)=0.45W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEF655N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEI655N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP655N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEU655

N-Channel200V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •PWMOptimized •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

CEU655

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■150V,6.4A,RDS(ON)=0.45Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEU655

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

CEU655

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 150V,6.4A,RDS(ON)=0.45W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CM655

WedgeBase

VCC

Visual Communications Company

详细参数

  • 型号:

    TS-C655

  • 制造商:

    Stellar Labs Power

  • 功能描述:

    Toshiba Satellite Replacement Laptop Battery

  • 制造商:

    STELLAR LABS POWER

  • 功能描述:

    REPL LAPTOP BATTERY TOSHIBA 6 CELL 10.8V 4400MAH LI-ION

供应商型号品牌批号封装库存备注价格
TELEDYNE
24+
DIP-14
16800
绝对原装进口现货 假一赔十 价格优势!?
询价
24+
PLCC68
200
询价
ST/意法
23+
PLCC52
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
TI
23+
MSOP8
50000
全新原装正品现货,支持订货
询价
TI/德州仪器
23+
MSOP-8
50000
全新原装正品现货,支持订货
询价
TI/德州仪器
24+
NA/
8250
原装现货,当天可交货,原型号开票
询价
TI/德州仪器
22+
MSOP-8
20000
原装现货,实单支持
询价
TI/
24+
MSOP8
5000
全新原装正品,现货销售
询价
TI/
22+23+
MSOP8
8000
新到现货,只做原装进口
询价
TSC/台湾半导体
24+
MSOP-8
60000
全新原装现货
询价
更多TS-C655供应商 更新时间2025-7-19 22:21:00