NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TPV8100 is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V. FEATURES INCLUDE: • Internal Input, Output Matching • Common Emitter Configuration • Gold Metalization • Emitter Ballasting

文件：24.51 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including double input and output

文件：161.12 Kbytes 页数：6 Pages

Motorola

摩托罗拉

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TPV8100B is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V. FEATURES INCLUDE: • Internal Input, Output Matching • Common Emitter Configuration • Gold Metalization • Emitter Ballasting

文件：25.41 Kbytes 页数：1 Pages

ASI

470-860 MHz, 150 W, 28 V RF Power Transistor

Overview TPV8100B removed from active portfolio. Possible Replacement Part: None.\n The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. \n•To be used class AB for TV band IV and V.\n•Specified 28 Volts, 860 MHz Characteristics\nOutput Power = 125 Watts (peak sync.)\nOutput Power = 100 Watts (CW)\nMinimum Gain = 8.5 dB\n•Specified 32 Volts, 860 MHz Characteristics\n Output Power = 150 Watts (peak sync.)\n•Circuit board photomaster av;

恩XP

恩智浦

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor