首页 >TPS2022DRBR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
POWER-DISTRIBUTIONSWITCHES | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
100V,precision,bidirectionalcurrentsenseamplifier Features •Widecommon-modevoltage:-4to100V •Highcommon-moderejectionCMR:100dBmin. •Offsetvoltage:±150µVmax. •Offsetdrift:0.5µV/°Cmax. •EnhancedPWMrejection •2.7to5.5Vsupplyvoltage •Internalfixedgain –TSC2020:20V/V –TSC2021:50V/V –TSC2022:100V/V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS [SPRAGUE] HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS [SPRAGUE] HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS [SPRAGUE] HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
PACKAGEINFORMATION
| etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
4.8TO5.85GHzHIGHPOWERGaAsMMICSPDTSWITCH DESCRIPTION NECsUPG2022TBisahighpowerGaAsMMICSPDT(SinglePoleDoubleThrow)switch.Thisdevicecanoperatefrom4.8to5.85GHzwithlowinsertionloss.Itishousedinacompact,leadfree6-pinsuperminimoldpackage. FEATURES •OPERATINGFREQUENCY: f=4.8to5.85GHz •LOWI | CEL California Eastern Labs | CEL | ||
GaAsINTEGRATEDCIRCUIT FEATURES •Operatingfrequency:f=4.8to5.85GHz •Lowinsertionloss:LINS=0.8dBTYP.@f=4.9to5.2GHz LINS=0.9dBTYP.@f=5.8GHz •Handlingpower:Pin(0.1dB)=+30dBmTYP.@f=4.9to5.2GHz Pin(0.1dB)=+31dBmTYP.@f=5.2to5.85GHz •Controlvoltage:Vcont= | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
Thin-FilmCascadableAmplifier10to2000MHz | TELEDYNETeledyne Technologies Incorporated 华特力科 | TELEDYNE | ||
DualN-ChMOSFET | WIINSOKShenzhen Guan Hua Wei Ye Co., Ltd 微硕半导体微硕半导体（深圳）有限公司 | WIINSOK |
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