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U20100DG

20.0AmpereHeatsinkDoublerPolarityUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

U20100G

20.0AmpereHeatsinkCommonCathodeUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

U20100GR

20.0AmpereHeatsinkCommonAnodeUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

U20100RG

20.0AmpereHeatsinkCommonAnodeUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

U20100SG

20.0AmpereHeatsinkSeriesConnectionUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

UWQN20100

Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

V20100C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.50VatIF=5A

UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s

VishayVishay Siliconix

威世科技威世科技半导体

V20100C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

V20100R

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.54VatIF=5A

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106 •Com

VishayVishay Siliconix

威世科技威世科技半导体

V20100R

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein

VishayVishay Siliconix

威世科技威世科技半导体

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