| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：TPS7H6013HBXEM；Package：CFP；TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers 1Features •RadiationPerformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergytransfer(LET) =75MeV-cm2/mg –Single-eventtransi | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
Marking：TPS7H6013HBXEM；Package：CFP；TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers 1Features •RadiationPerformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergytransfer(LET) =75MeV-cm2/mg –Single-eventtransi | TI2Texas Instruments 德州仪器美国德州仪器公司 | TI2 | ||
Marking：TPS7H6013HBXEM；Package：CFP；TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers 1Features •RadiationPerformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergytransfer(LET) =75MeV-cm2/mg –Single-eventtransi | TI2Texas Instruments 德州仪器美国德州仪器公司 | TI2 | ||
Marking：TPS7H6013HBXEM；Package：CFP；TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers 1Features •RadiationPerformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergytransfer(LET) =75MeV-cm2/mg –Single-eventtransi | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
Marking：TPS7H6023HBXEMEVAL-ONLY；Package：CFP；TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers 1Features •RadiationPerformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergytransfer(LET) =75MeV-cm2/mg –Single-eventtransi | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
Marking：TPS7H6023HBXEM；Package：CFP；TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers 1Features •RadiationPerformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergytransfer(LET) =75MeV-cm2/mg –Single-eventtransi | TI2Texas Instruments 德州仪器美国德州仪器公司 | TI2 | ||
Marking：TPS7H6023HBXEM；Package：CFP；TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers 1Features •RadiationPerformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergytransfer(LET) =75MeV-cm2/mg –Single-eventtransi | TI2Texas Instruments 德州仪器美国德州仪器公司 | TI2 | ||
Marking：TPS7H6023HBXEMEVAL-ONLY；Package：CFP；TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers 1Features •RadiationPerformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergytransfer(LET) =75MeV-cm2/mg –Single-eventtransi | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
Marking：TPS92530；Package：HTQFP；TPS92530-Q1 Automotive 3-Channel, Constant-Current and Constant-Voltage Synchronous Buck LED Driver 1Features •AEC-Q100qualifiedforautomotiveapplications –Grade1:–40°Cto125°Cambientoperating temperature –DeviceHBMclassificationlevelH1C –DeviceCDMclassificationlevelC5 •Functionalsafetycapable –Documentationavailabletoaidfunctionalsafety systemdesign •4.5 | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
Marking：TPS92541；Package：HTQFP；TPS92541-Q1 65V Automotive Synchronous Boost Controller, and 2A Synchronous CC/CV Buck Converter 1Features •AEC-Q100qualifiedforautomotiveapplications –Grade1:–40°Cto125°Cambientoperating temperature –DeviceHBMclassificationlevelH1C –DeviceCDMclassificationlevelC5 •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •4.5 | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 |
详细参数
- 型号：
TPS
- 制造商：
PerkinElmer Inc
- 功能描述：
INFRARED TEMPERATURE SENSOR, No. of
- Channels：
1, Input
- Current：
2mA, Opto Case Sty
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
N/A |
24+ |
N/A |
8848 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
正纳电子热销 |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
询价 | ||
80000 |
询价 | ||||||
TI |
24+ |
{{sibling.Package}} |
10000 |
询价 | |||
TI |
23+ |
QFN16 |
1 |
正规渠道,只有原装! |
询价 | ||
TI |
23+ |
QFN16 |
20000 |
询价 | |||
23+ |
NA |
6800 |
原装正品,力挺实单 |
询价 | |||
TI |
24+ |
QFN16 |
5000 |
全新原装正品,现货销售 |
询价 | ||
TI |
22+23+ |
QFN16 |
8000 |
新到现货，只做原装进口 |
询价 | ||
24+ |
6000 |
全新原厂原装正品现货,低价出售,实单可谈 |
询价 |
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