采用 TO-220 封装的 650V 110mΩ氮化镓GaN FET

The TPH3208PS 650V, 110mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.\r\n\r\n Transphorm GaN offers improved efficiency over silicon,through lower • 易于驱动 – 与标准栅极驱动器兼容\n• 低传导、低开关损耗\n• 低 Qrr (54nC) – 无需任何续流二极管\n• GSD 引脚布局可提升高速设计\n• 通过 JEDEC 认证的 氮化镓GaN技术\n• 符合限制有害物质指令 (RoHS) 规范要求且不含卤素\n• 实现更高效的拓扑 – 易于实施无桥图腾柱设计\n• 快速切换，提高效率\n• 提高功率密度\n• 系统尺寸减小、重量减轻\n• BOM 成本更低;

Transphorm

650V GaN FET TO-220 Series

文件：1.74165 Mbytes 页数：13 Pages

TRANSPHORM

Crystal Unit SMD 2.0x1.6 50.0MHz

Features: Surface Mount Hermetic Package Excellent Reliability Performance Good Frequency Perturbation and Stability over temperature Ultra Miniature Package Moisture Sensitivity Level (MSL) : Level-1 Description and Applications: Surface mount 2.0mmx1.6mm crystal unit for use in wireless

文件：177.24 Kbytes 页数：8 Pages

TAI-SAW

嘉硕科技

Dual N-Channel MOSFET uses advanced trench technology

文件：1.40913 Mbytes 页数：5 Pages

DOINGTER

杜因特

8-Bit Bidirectional Voltage-Level Translator for Open-Drain and Push-Pull Application

文件：383.48 Kbytes 页数：11 Pages

UNIONSEMI

英联