首页 >TPH>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

TPH

2W 3KVDC Isolated Single & Dual Output DC/DC Converters

TOPPOWERToppower Electronic Technology Limited

顶源电子广州顶源电子科技股份有限公司

TPH

2W 3KVDC Isolated Single & Dual Output DC/DC Converters

TOPPOWERToppower Electronic Technology Limited

顶源电子广州顶源电子科技股份有限公司

TPH11003NL

MOSFETs Silicon N-channel MOS

Applications •SwitchingVoltageRegulators •DC-DCConverters Features (1)High-speedswitching (2)Smallgatecharge:QSW=2.0nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=12.6mΩ(typ.)(VGS=4.5V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=30V) (5)Enhancement

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TPH11006NL

MOSFETs Silicon N-channel MOS

Applications •SwitchingVoltageRegulators •DC-DCConverters •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=6.4nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=9.6mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=60V) (

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TPH1110ENH

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=2.6nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=96mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=200V) (5

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TPH1110FNH

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=4.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=95mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=250V) (5

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TPH14006NH

MOSFETs Silicon N-channel MOS

Applications •SwitchingVoltageRegulators •MotorDrivers •DC-DCConverters Features (1)Smallfootprintduetoasmallandthinpackage (2)High-speedswitching (3)Smallgatecharge:QSW=6.3nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=11mΩ(typ.)(VGS=10V) (5)Low

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TPH1400CQH

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.5nC(typ.) (3)Smalloutputcharge:Qoss=56nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=11.4mΩ(typ.)(VGS=10

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TPH1500CNH

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=13mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=150V) (5

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TPH1500CNH1

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.2nC(typ.) (3)Smalloutputcharge:Qoss=67.4nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=13mΩ(typ.)(VGS=10

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TPH1R005PL

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=34nC(typ.) (3)Smalloutputcharge:Qoss=98nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=0.8mΩ(typ.)(VGS=10V) (5)Lowleakagec

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TPH1R104PB

Silicon N-channel MOS (U-MOS-H)

1.Applications •Automotive •MotorDrivers •SwitchingVoltageRegulators 2.Features (1)AEC-Q101qualified (2)Small,thinpackage (3)Lowdrain-sourceon-resistance:RDS(ON)=0.95mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=40V) (5)Enhancementmode:

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TPH1R204PB

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=21nC(typ.) (3)Smalloutputcharge:Qoss=56nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=0.85mΩ(typ.)(VGS=10V)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TPH1R204PL1

Silicon N-channel MOS (U-MOS-H)

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=17nC(typ.) (3)Smalloutputcharge:Qoss=56nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=1.0mΩ(typ.)(VGS=10V) (5)Lowl

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TPH1R306P1

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=22nC(typ.) (3)Smalloutputcharge:Qoss=77.5nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=0.96mΩ(typ.)(VGS=10V

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TPH1R306PL

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=22nC(typ.) (3)Smalloutputcharge:Qoss=77.5nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=1.0mΩ(typ.)(VGS=10V)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TPH1R306PL1

Silicon N-channel MOS (U-MOS-H)

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=22nC(typ.) (3)Smalloutputcharge:Qoss=77.5nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=1.0mΩ(typ.)(VGS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TPH1R403NL1

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=10.6nC(typ.) (3)Smalloutputcharge:Qoss=50nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=1.2mΩ(typ.)(VGS=10V) (5)Lowleakage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TPH1R405PL

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=22nC(typ.) (3)Smalloutputcharge:Qoss=67nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=1mΩ(typ.)(VGS=10V) (5

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TPH1R712MD

MOSFETs Silicon P-Channel MOS

Applications •Lithium-IonSecondaryBatteries •PowerManagementSwitches Features (1)Lowdrain-sourceon-resistance:RDS(ON)=1.35mΩ(typ.)(VGS=-4.5V) (2)Lowleakagecurrent:IDSS=-10μA(max)(VDS=-20V) (3)Enhancementmode:Vth=-0.5to-1.2V(VDS=-10V,ID=-1.0mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

详细参数

  • 型号:

    TPH

  • 功能描述:

    保险丝 TELPOWER FUSE

  • RoHS:

  • 制造商:

    Littelfuse

  • 产品:

    Surface Mount Fuses

  • 电流额定值:

    0.5 A

  • 电压额定值:

    600 V

  • 保险丝类型:

    Fast Acting

  • 保险丝大小/组:

    Nano

  • 尺寸:

    12.1 mm L x 4.5 mm W

  • 端接类型:

    SMD/SMT

  • 系列:

    485

供应商型号品牌批号封装库存备注价格
TOSHIBA/东芝
2023+
SOP-Advance-8
6000
全新原装深圳仓库现货有单必成
询价
TOSHIBA
14+
SOP8
100000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
3peak
22+
16000
原装现货 支持实单
询价
TOSHIBA
19+
SOP-8
20000
只做原装正品优势供应
询价
TOSHIBA/东芝
22+
DFN
6000
进口原装 假一罚十 现货
询价
TOSHIBA/东芝
21+
QFN8
30000
原装现货假一赔十
询价
TOSHIBA/东芝
23+
QFN8
1070
询价
TOSHIBA/东芝
23+
SOP-8
6000
公司十几年如一日,只做原装正品,优势渠道保证每一片
询价
TOSHIBA/东芝
21+
SOP-Advance-8
26880
公司只有原装
询价
原装TOSHIBA
2023+
SOP8
700000
柒号芯城跟原厂的距离只有0.07公分
询价
更多TPH供应商 更新时间2024-6-23 11:22:00