TPC8107中文资料TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)数据手册Toshiba规格书

描述 Description

Lithium Ion Battery

应用 Application

Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 31 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)