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TVCO-1850

SMDVOLTAGECONTROLLEDOSCILLATOR(12.8X12.8X4.0MM)

FEATURES WIDEFREQUENCYRANGEVCO LOWPHASENOISE FASTDELIVERY/LOWCOST CUSTOMFREQUENCYRANGEAVAILABLE-CONTACTSALES@TRANSKO.COM

Transko

Transko Electronics, Inc.

UPA1850

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION ThemPA1850isaswitchingdevicewhichcanbe drivendirectlybya2.5-Vpowersource. ThemPA1850featuresalowon-stateresistanceand excellentswitchingcharacteristics,andissuitablefor applicationssuchaspowerswitchofportablemachine andsoon. FEATURES ·Canbe

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPA1850

P-CHANNELMOSFIELDEFFECTTRANSISTORFORSWITCHING

DESCRIPTION TheµPA1850isaswitchingdevicewhichcanbedrivendirectlybya2.5-Vpowersource. TheµPA1850featuresalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •Canbedri

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

VFC1850SA

VOLTAGECONTROLLEDOSCILLATORS

SYNERGY

Synergy Microwave Corporation

VSMY1850

HighSpeedInfraredEmittingDiodes,850nm,SurfaceEmitterTechnology

DESCRIPTION AspartoftheSurfLightTMportfolio,theVSMY1850isan infrared,850nmemittingdiodebasedonGaAlAssurface emitterchiptechnologywithhighradiantintensity,high opticalpowerandhighspeed,moldedinclear,untinted 0805plasticpackageforsurfacemounting(SMD). FE

VishayVishay Siliconix

威世科技威世科技半导体

VSMY1850

HighSpeedInfraredEmittingDiodes,850nm,SurfaceEmitterTechnology

DESCRIPTION AspartoftheSurfLightTMportfolio,theVSMY1850isan infrared,850nmemittingdiodebasedonGaAlAssurface emitterchiptechnologywithhighradiantintensity,high opticalpowerandhighspeed,moldedinclear,untinted 0805plasticpackageforsurfacemounting(SMD). FE

VishayVishay Siliconix

威世科技威世科技半导体

VSMY1850

HighSpeedInfraredEmittingDiodes

VishayVishay Siliconix

威世科技威世科技半导体

VSMY1850

HighSpeedInfraredEmittingDiodes,850nm,SurfaceEmitterTechnology

VishayVishay Siliconix

威世科技威世科技半导体

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