首页 >TMD3N50LF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
3Amps,500VoltsN-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
FastSwitching •FEATURES •DrainCurrentID=3A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=3.0Ω(Max) •FastSwitching •APPLICATIONS •Switchingpowersupplies,converters,ACandDCmotorcontrols | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
3A,500VN-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
N-CHANNELINSULATEDGATEBIPOLARTRANSISTOR DESCRIPTION TheUTC3N50K-MKisanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavala | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
N-CHANNELINSULATEDGATEBIPOLARTRANSISTOR DESCRIPTION TheUTC3N50K-MKisanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavala | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
N-CHANNELINSULATEDGATEBIPOLARTRANSISTOR DESCRIPTION TheUTC3N50K-MKisanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavala | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
N-CHANNELINSULATEDGATEBIPOLARTRANSISTOR DESCRIPTION TheUTC3N50K-MKisanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavala | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
N-CHANNELINSULATEDGATEBIPOLARTRANSISTOR DESCRIPTION TheUTC3N50K-MKisanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavala | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
N-Channel650V(D-S)PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
3A,500VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC3N50ZisanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanch | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC |
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