首页 >TMC1731BNC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
KeysightTechnologiesU1730CSeriesHandheldLCRMeters | KEYSIGHTKeysight Technologies 是德科技是德科技（中国）有限公司 | KEYSIGHT | ||
ForElectronic,ElectricalandIndustrialProcessTesting Features ––Extendedmeasurementdistanceofupto100meters ––Viewreadingsofuptofourhandheldmeterssimultaneously ––CompatibleacrossallexistingKeysightU1200serieshandheldmeters ––60,000pointsintervallogging* ––DownloadloggeddatatoaPCviaBluetoothconnection* ––Micro | KEYSIGHTKeysight Technologies 是德科技是德科技（中国）有限公司 | KEYSIGHT | ||
TakeyourexpectationshigherwiththelatestLCRmeters | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
TakeyourexpectationshigherwiththelatestLCRmeters | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
TakeyourexpectationshigherwiththelatestLCRmeters | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES •Lowon-resistance RDS(on)1=10.3mΩTYP.(VGS=–10V,ID=–5.0A) RDS(on)2=14.6mΩTYP.(VGS=–4.5V,ID=–5.0A) RDS(on)3=16.5mΩTYP.(VGS=–4.0V,ID=–5.0A) •LowCiss:Ciss=2600pFTYP. •Built-inG-Sprotect | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION TheµPA1731isP-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofnotebookcomputersandLi-ionbatteryprotectioncircuit. FEATURES •Lowon-resistance RDS(on)1=10.3mΩTYP.(VGS=–10V,ID=–5.0A) RDS(on)2=14.6mΩTYP.(VGS=– | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES •Lowon-resistance RDS(on)1=10.3mΩTYP.(VGS=–10V,ID=–5.0A) RDS(on)2=14.6mΩTYP.(VGS=–4.5V,ID=–5.0A) RDS(on)3=16.5mΩTYP.(VGS=–4.0V,ID=–5.0A) •LowCiss:Ciss=2600pFTYP. •Built-inG-Sprotect | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION TheµPA1731isP-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofnotebookcomputersandLi-ionbatteryprotectioncircuit. FEATURES •Lowon-resistance RDS(on)1=10.3mΩTYP.(VGS=–10V,ID=–5.0A) RDS(on)2=14.6mΩTYP.(VGS=– | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
