首页 >TM45N20>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Synchronousrectification. DC/DCconverter. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Synchronousrectification. DC/DCconverter. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Synchronousrectification. DC/DCconverter. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AdvancedPowerMOSFET FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10㎂(Max.)@VDS=200V LowRDS(ON):0.054Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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