首页 >TM4106M>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
RFVectorSignalGenerators | TEKTRONIXTektronix 泰克泰克科技(中国)有限公司 | TEKTRONIX | ||
CommonModeChokes&CoupledInductors | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET Features •BVDSS>60V •RDS(on)≤2.5Ω@VGS=10V •MaximumcontinuousdraincurrentID=200mA •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
N-CHANNELENHANCEMENTMODEVERTICALDMOSFET SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET PARMARKINGDETAIL-MZ | Zetex Zetex Semiconductors | Zetex | ||
60VN-CHANNELENHANCEMENTMODEVERTICALDMOSFETINSOT23 Features •BVDSS>60V •RDS(on)≤2.5Ω@VGS=10V •MaximumcontinuousdraincurrentID=200mA •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
N-Channel60-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
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