TM2313

Digital Control Audio Processing Circuit

2313-RC

HighCurrentToroidInductors

2313-RC

HighCurrentToroidInductorsHorizontalorverticalmount

2313-RC

HighCurrentToroidInductors

2313-RC

HighCurrentToroidInductors

2313-RC

HighCurrentToroidInductors

AM2313

MOSFETP-CHANNELENHANCEMENTMODE

DESCRIPTION TheAM2313isavailableinSOT-23Spackage. FEATURES -18V/3A, RDS(ON)=120mΩ(MAX)@VGS=-4.5V. RDS(ON)=150mΩ(MAX)@VGS=-2.5V. SuperHighdensecelldesignforextremelylowRDS(ON). ReliableandRugged. AvailableinSOT-23SPackage APPLICATION PowerManag

AM2313P

P-ChannelLogicLevelMOSFET

TheseminiaturesurfacemountMOSFETsutilizeHighCellDensityprocess.LowrDS(on)assuresminimalpowerlossandconservesenergy,makingthisdeviceidealforuseinpowermanagementcircuitry.Typicalapplicationsarevoltagecontrolsmallsignalswitch,powermanagementinportableandbatte

AP2313GN-HF

SimpleDriveRequirement,SmallPackageOutline

APM2313

P-ChannelEnhancementModeMOSFET

Features •-20V/-1.8A,RDS(ON)=108mΩ(typ.)@VGS=-4.5V RDS(ON)=135mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremely LowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquip