首页 >TM20P08>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NCEP-ChannelEnhancementModePowerMOSFET Description TheNCE20P08Jusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltages.Thisdeviceissuitableforuseasaloadswitching applicationandawidevarietyofotherapplications. GeneralFeatures ●VDS=-20V,ID=-8A RDS(O | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER |
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