首页 >TM1916Q>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
1.7ABoostWLEDDriver | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
CrystalUnitSMD3.2x2.524.00MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage MoistureSensitivityLevel(MSL):Level-1 AECQ-200Compliant DescriptionandApplications: Surfacemount3.2mmx2.5mmcrystalunit | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
MISCELLANEOUSHARDWARE-ACCESSORIES | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
TOCHANGEWITHOUTNOTICEACCESSORIES | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
OldCompanyNameinCatalogsandOtherDocuments DESCRIPTION TheµPA1916isaswitchingdevicewhichcanbedrivendirectlybya1.8Vpowersource. Thisdevicefeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •1.8Vdriv | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
P-CHANNELMOSFIELDEFFECTTRANSISTORFORSWITCHING DESCRIPTION TheµPA1916isaswitchingdevicewhichcanbedrivendirectlybya1.8Vpowersource. Thisdevicefeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •1.8Vdriv | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
P-Channel30-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-CHANNELMOSFIELDEFFECTTRANSISTORFORSWITCHING DESCRIPTION TheµPA1916isaswitchingdevicewhichcanbedrivendirectlybya1.8Vpowersource. Thisdevicefeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •1.8Vdriv | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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