首页 >TM1722IC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HIGHSENSITIVITYREFLECTIVECOLORSENSORWITHLIGHTTOVOLTAGECONVERTERS | TAOS TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS | TAOS | ||
DualFeedEmbeddedBeiDou/Galileo/GPS/GLONASSAntenna | TALLYSMAN Tallysman Wireless Inc. | TALLYSMAN | ||
Zenerdiode | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
1.5MHz,1.3A,High-EfficiencySynchronous-RectifiedBuckConverter | UPI uPI Semiconductor Corp | UPI | ||
MOSFIELDEFFECTTRANSISTOR FEATURES •Lowon-resistance RDS(on)1=21.0mΩMAX.(VGS=10V,ID=4.5A) RDS(on)2=29.0mΩMAX.(VGS=4.5V,ID=4.5A) RDS(on)3=32.0mΩMAX.(VGS=4.0V,ID=4.5A) •LowCiss:Ciss=980pFTYP. •Built-inG-Sprotectiondiode •Smallandsurfacemountpackage(PowerSOP8) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION TheµPA1722isN-ChannelMOSFieldEffectTransistordesignedforDC/DCconvertersandpowermanagementapplicationsofnotebookcomputers. FEATURES •Lowon-resistance RDS(on)1=21.0mΩMAX.(VGS=10V,ID=4.5A) RDS(on)2=29.0mΩMAX.(VGS=4.5V,ID=4.5A) | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR FEATURES •Lowon-resistance RDS(on)1=21.0mΩMAX.(VGS=10V,ID=4.5A) RDS(on)2=29.0mΩMAX.(VGS=4.5V,ID=4.5A) RDS(on)3=32.0mΩMAX.(VGS=4.0V,ID=4.5A) •LowCiss:Ciss=980pFTYP. •Built-inG-Sprotectiondiode •Smallandsurfacemountpackage(PowerSOP8) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION TheµPA1722isN-ChannelMOSFieldEffectTransistordesignedforDC/DCconvertersandpowermanagementapplicationsofnotebookcomputers. FEATURES •Lowon-resistance RDS(on)1=21.0mΩMAX.(VGS=10V,ID=4.5A) RDS(on)2=29.0mΩMAX.(VGS=4.5V,ID=4.5A) | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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