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5616

2-FUNCTION,4-DIGITLCDAUTOMOTIVECLOCK-PROGRAMMABLE

FEATURES ■DigitalTuningofCrystalFrequency ■PROMforStoringFrequencyCorrectionInformation ■12or24HourTimekeepingOption ■FlashingColon ■TwoSwitchesControlAllSettingFunctions ■HighNoiseImmunity ■InternalPower-UpResetCircuitry ■InternalVoltageRegulation

Allegro

Allegro MicroSystems

5616-RC

HighCurrentChokes

BournsBourns Inc.

伯恩斯(邦士)

ALC5616

Ultra-LowPowerAudioCODECforMobileDevices

REALTEKRealtek Semiconductor Corp

瑞昱瑞昱半导体公司

ALC5616-CG

Ultra-LowPowerAudioCODECforMobileDevices

REALTEKRealtek Semiconductor Corp

瑞昱瑞昱半导体公司

ALC5616-CGT

Ultra-LowPowerAudioCODECforMobileDevices

REALTEKRealtek Semiconductor Corp

瑞昱瑞昱半导体公司

AOZ5616QI

High-Current,High-PerformanceDrMOSPowerModule

GeneralDescription TheAOZ5616QIisahighefficiencysynchronousbuck powerstagemoduleconsistingoftwoasymmetrical MOSFETsandanintegrateddriver.TheMOSFETsare individuallyoptimizedforoperationinthesynchronous buckconfiguration.TheHigh-SideMOSFETisoptimized toachieve

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

BCP5616

LowpowerNPNTransistor

SMALLSIGNALNPNTRANSISTORS ■SILICONEPITAXIALPLANARPNPMEDIUMVOLTAGETRANSISTORS ■SOT-223PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPESAREBCP52-16ANDBCP53-16RESPECTIVELY APPLICATIONS ■MEDIUMVOLTAGELOADSWITCHTRANSISTORS ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BCP5616Q

NPNMEDIUMPOWERTRANSISTORSINSOT223

Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP5616Q

80VNPNMEDIUMPOWERTRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616QTA

80VNPNMEDIUMPOWERTRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616QTA

NPNMEDIUMPOWERTRANSISTORSINSOT223

Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP5616QTC

NPNMEDIUMPOWERTRANSISTORSINSOT223

Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP5616QTC

80VNPNMEDIUMPOWERTRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616T

80VNPNMEDIUMPOWERTRANSISTORINSOT223

Features BVCEO>80V IC=1AHighContinuousCollectorCurrent ICM=2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616TA

NPNSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT223

Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP5616TC

NPNSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT223

Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP5616TQ

80VNPNMEDIUMPOWERTRANSISTORINSOT223

Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616TQTA

80VNPNMEDIUMPOWERTRANSISTORINSOT223

Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616TQTC

80VNPNMEDIUMPOWERTRANSISTORINSOT223

Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCX5616

NPNmediumpowertransistor

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

供应商型号品牌批号封装库存备注价格
TI/德州仪器
22+
MSOP
9600
原装现货,优势供应,支持实单!
询价
TI
23+
SMD
1015
全新原装正品,真实库存,特价销售
询价
TI
17+
SOIC-8
6200
100%原装正品现货
询价
TI
05/06+
459
全新原装100真实现货供应
询价
TI
16+
SOP
500
原装现货假一罚十
询价
TI
23+
SMD
5000
原装正品,假一罚十
询价
TI
17+
原厂原封
6523
进口原装公司百分百现货可出样品
询价
TI
24+
SOP-8
5000
只做原装公司现货
询价
TexasInstruments
18+
IC12BIT3USDACS/O8-SOIC
6800
公司原装现货/欢迎来电咨询!
询价
TI
10G4
SMD
6000
绝对原装自己现货
询价
更多TLV5616CDK供应商 更新时间2024-6-21 15:16:00