TK8A55DA

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TK8A55DA

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.9Ω(typ.) •Highforwardtransferadmittance:|Yfs|=3.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=550V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TK8A55DA

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.04Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

K8A55DA

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(π-MOSⅦ)

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.9Ω(typ.) •Highforwardtransferadmittance:|Yfs|=3.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=550V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)