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M63812FP

7-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63812P,M63812FP,M63812GPandM63812KPareseven-circuitSingetransistorarrayswithclampingdiodes. ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Fourpackag

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M63812GP

7-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63812P,M63812FP,M63812GPandM63812KPareseven-circuitSingetransistorarrayswithclampingdiodes. ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Fourpackag

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M63812KP

7-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63812P,M63812FP,M63812GPandM63812KPareseven-circuitSingetransistorarrayswithclampingdiodes. ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Fourpackag

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M63812P

7-UNIT300mATRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M63812P,M63812FP,M63812GPandM63812KPareseven-circuitSingetransistorarrayswithclampingdiodes. ThecircuitsaremadeofNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinput-currentsupply. FEATURES ●Fourpackag

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

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