TK60A08J1

Switching Regulator Application

SwitchingRegulatorApplication •High-Speedswitching •Smallgatecharge:Qg=86nC(typ.) •Lowdrain-sourceONresistance:RDS(ON)=6.2mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=120S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=75V) •Enhancement-mode

TK60A08J1

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TK60A08J1

Power MOSFET (N-ch single 60V VDSS 150V); Drain current ID 60 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 75 V \n;

Polarity：N-ch\nGeneration：U-MOSⅢ-H\nRoHS Compatible Product(s) (#)：Available\n

MD60A08J1

GlassPassivatedRectifierDiodeModules

TK6A60D

TOSHIBA/东芝
TO220F

TOSHIBA/东芝