TK10B60D(F)规格书应用电路库存现货NIEC-114ic电子网

首页 >TK10B60D(F)>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
AOB10B60D	文件：593.35 Kbytes Page：9 Pages	600V,10AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOK10B60D	文件：651.89 Kbytes Page：9 Pages	600V,10AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOT10B60D	文件：646.66 Kbytes Page：9 Pages	600V,10AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOTF10B60D	文件：659.19 Kbytes Page：9 Pages	AOTF10B60D	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
FCF10B60	文件：162.29 Kbytes Page：1 Pages	FRED	NIEC Nihon Inter Electronics Corporation	NIEC
FCU10B60	文件：52.54 Kbytes Page：5 Pages	FRD-ForPowerFactorImprovementHighFrequencyRecification FEATURES FullyMoldedIsolation DualDiodes–CathodeCommon Ultra–FastRecovery LowForwardVoltageDrop *HighSurgeCapability	NIEC Nihon Inter Electronics Corporation	NIEC
FSF10B60	文件：177.14 Kbytes Page：1 Pages	FRED	NIEC Nihon Inter Electronics Corporation	NIEC
FSF10B60B	文件：194.81 Kbytes Page：1 Pages	FRED	NIEC Nihon Inter Electronics Corporation	NIEC
FSU10B60	文件：43.11 Kbytes Page：5 Pages	FORPOWERFACTORIMPROVEMENTHIGHFREQUENCYRECTIFICATION FEATURES FullyMoldedIsolationCase Ultra–FastRecovery LowForwardVoltageDrop LowPowerLoss,HighEfficiency *HighSurgeCapability	NIEC Nihon Inter Electronics Corporation	NIEC
GB10B60KD	文件：324.07 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien	IRF International Rectifier	IRF
IKCM10B60GA	文件：572.28 Kbytes Page：16 Pages	ControlIntegratedPOwerSystem	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IKCM10B60GA	文件：1.22597 Mbytes Page：17 Pages	ControlIntegratedPOwerSystem	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IKCM10B60HA	文件：544.77 Kbytes Page：16 Pages	ControlIntegratedPOwerSystem	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IRGB10B60KD	文件：324.07 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien	IRF International Rectifier	IRF
IRGB10B60KDPBF	文件：365.94 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru	IRF International Rectifier	IRF
IRGS10B60KD	文件：324.07 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien	IRF International Rectifier	IRF
IRGS10B60KDPBF	文件：309.73 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE	IRF International Rectifier	IRF
IRGS10B60KDPBF	文件：365.94 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru	IRF International Rectifier	IRF
IRGSL10B60KD	文件：324.07 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien	IRF International Rectifier	IRF
IRGSL10B60KDPBF	文件：365.94 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru	IRF International Rectifier	IRF

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市联世界科技有限公司（原深创辉科技）	TK10B60D(F)	TOSHIBA	11+		75	原装正品长期供货，如假包赔包换徐小姐13714450367	询价
深圳市振鑫微电子科技有限公司	TK10B60D(F)	TOSHIBA	23+		589610	新到现货原厂一手货源价格秒杀代理!	询价
深圳市毅创腾电子科技有限公司	TK10E60W			TO-220AB	3164	正品原装--自家现货-实单可谈	询价
深圳市科恒伟业电子有限公司	TK10E60W	TOSHIBA	2017+	TO220	28562	只做原装正品假一赔十!	询价
深圳市瑞新盛科技有限公司	TK10E60W	TOSHIBA		TO-220	20000	原装正品	询价
深圳市华睿芯科技有限公司	TK10E60W	TOSHIBA	23+	TO-220	20000	原厂原装正品现货	询价
深圳市宏捷佳电子科技有限公司	TK10E60W	Toshiba	23+	TO-TO-220	33500	全新原装真实库存含13点增值税票!	询价
深圳市维尔达电子有限公司	TK10E60W	TOSHIBA	2023+	TO-220	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
深圳市赛能新源半导体有限公司	TK10E60W	TOSHIBA	21+	TO-220	16500	进口原装正品现货	询价
深圳市鼎欣微电子有限公司	TK10E60W	TOSHIBA/东芝	21+	TO220	19000	只做正品原装现货	询价

更多TK10B60D(F)供应商更新时间2024-9-21 14:30:00

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