首页 >TK10A60EIC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
MOSFETsSiliconN-ChannelMOS(DTMOS?? Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) Applications •SwitchingVoltageRegulators | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=0.38Ω •EasytocontrolGateswitching •Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performancean | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
FRD-ForPowerFactorImprovementHighFrequencyRectification FEATURES *Ultra–FastRecovery *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability | NIEC Nihon Inter Electronics Corporation | NIEC | ||
FASTRECTIFIERS(10A,300-600V) UltraFastRecoveryRectifierDiodes ULTRAFASTRECTIFIERS10AMPERES300--600VOLTS | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
UtraFastRecoveryRectifierDiodes | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
FullPlasticUltrafastPowerRectifiers | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
Single-PhaseSingleIn-LineBridgeRectifiers | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
1.0AFastRecoveryRectifier | TOREXTorex Semiconductor 特瑞仕特瑞仕半导体株式会社 | TOREX |
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