TK10A60D

丝印：K10A60D；Switching Regulator Applications

•Lowdrain-sourceON-resistance:RDS(ON)=0.58Ω(typ.) •Highforwardtransferadmittance:|Yfs|=6.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TK10A60D

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TK10A60D

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.72Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

TK10A60D

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

TK10A60D5

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TK10A60D5

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.05Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

TK10A60D5

Power MOSFET (N-ch 500V VDSS 700V); Drain current ID 10 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 600 V \n;

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚\n

TK10A60W

Power MOSFET (N-ch 500V VDSS 700V); Drain current ID 9.7 A \nPower Dissipation PD 30 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V \n;

Polarity：N-ch\nGeneration：DTMOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 / 马来西亚\n

TK10A60W

isc N-Channel MOSFET Transistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=0.38Ω •EasytocontrolGateswitching •Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performancean

TK10A60W

MOSFETs Silicon N-Channel MOS (DTMOS??

Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) Applications •SwitchingVoltageRegulators