首页 >TIX619>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VDSLFILTERSOLUTIONS | deltaDelta Electronics, Inc. 台达电子台达电子工业股份有限公司 | delta | ||
AdvancedVideoDisplayProcessor6 Outline YGV619isaVDP(VideoDisplayProcessor)adoptingOSDdisplaycontrolsystemwhichisbestsuitedtothedatabroadcasting.ThedigitalimageinterfaceofthisdeviceforconnectionwithMPEGdecoderhasbeenimproved.Theuseofthisdeviceallowsscreencompositionthatissuitedtomo | LSI LSI Computer Systems | LSI | ||
DUALNPNMEDIUMPOWERHIGHGAINTRANSISTORS SM-8DUALNPNMEDIUMPOWERHIGHGAINTRANSISTORS PARTMARKINGDETAIL-T619 | Zetex Zetex Semiconductors | Zetex | ||
NPNSILICONPOWER(SWITCHING)TRANSISTOR FEATURES *500mWPOWERDISSIPATION *ICCONT1A *2APeakPulseCurrent *ExcellentHFECharacteristicsUpTo2A(pulsed) *ExtremelyLowEquivalentOnResistance;RCE(sat) APPLICATIONS *LCDbacklightinginvertercircuits *BoostfunctionsinDC-DCconverters | Zetex Zetex Semiconductors | Zetex | ||
Super323횚SOT323NPNSILICONPOWER(SWITCHING)TRANSISTOR FEATURES *500mWPOWERDISSIPATION *ICCONT1A *2APeakPulseCurrent *ExcellentHFECharacteristicsUpTo2A(pulsed) *ExtremelyLowEquivalentOnResistance;RCE(sat) APPLICATIONS *LCDbacklightinginvertercircuits *BoostfunctionsinDC-DCconverters | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
Super323횚SOT323NPNSILICONPOWER(SWITCHING)TRANSISTOR FEATURES *500mWPOWERDISSIPATION *ICCONT1A *2APeakPulseCurrent *ExcellentHFECharacteristicsUpTo2A(pulsed) *ExtremelyLowEquivalentOnResistance;RCE(sat) APPLICATIONS *LCDbacklightinginvertercircuits *BoostfunctionsinDC-DCconverters | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
DUAL50VNPNLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits •BVCEO>50V •IC=4AContinuousCollectorCurrent •LowSaturationVoltage(100mVmax@1A) •RSAT=68mΩforLowEquivalentOnResistance •hFEspecifiedupto6Aforhighcurrentgainholdsup •DualNPNsavingfootprintandcomponentcount •Lowprofile0.8mmhig | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
DUAL50VNPNLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits •BVCEO>50V •IC=4AContinuousCollectorCurrent •LowSaturationVoltage(100mVmax@1A) •RSAT=68mΩforLowEquivalentOnResistance •hFEspecifiedupto6Aforhighcurrentgainholdsup •DualNPNsavingfootprintandcomponentcount •Lowprofile0.8mmhig | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
50VNPNLOWSATURATIONTRANSISTOR Features •BVCEO>50V •IC=4AContinuousCollectorCurrent •LowSaturationVoltage(100mVMax@1A) •RSAT=68mΩforaLowEquivalentOn-Resistance •hFESpecifiedupto6AforHighCurrentGainHoldUp •LowProfile0.6mmHighPackageforThinApplications •RJAEfficient,60Lowerth | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
50VNPNLOWSATURATIONTRANSISTOR Features •BVCEO>50V •IC=4AContinuousCollectorCurrent •LowSaturationVoltage(100mVMax@1A) •RSAT=68mΩforaLowEquivalentOn-Resistance •hFESpecifiedupto6AforHighCurrentGainHoldUp •LowProfile0.6mmHighPackageforThinApplications •RJAEfficient,60Lowerth | DIODESDiodes Incorporated 美台半导体 | DIODES |
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