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M61512FP

5.1chElectronicVolume

6chElectricVolumewith6InputSelector FEATURE •6InputSelector(6ch+MUTE) •InputGainControl(0/3/6/9dB) •INPUTATT(0/-5dB) •6chDependentElectronicVolume (6ch0~-87dB,-∞)FL,FR,C,SL,SR,SWch •2LinesRECOutput (foronethingbuiltinmuteswitch) •BuiltinBassBoost

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M61512SFCN

5.0x7.0mm,3.0,3.3&5.0V,HCMOSorClippedSineWave,PrecisionTCXO/TCVCXO

MTRONPTI

mtronpti

M61512SFSN

5.0x7.0mm,3.0,3.3&5.0V,HCMOSorClippedSineWave,PrecisionTCXO/TCVCXO

MTRONPTI

mtronpti

M61512STCN

5.0x7.0mm,3.0,3.3&5.0V,HCMOSorClippedSineWave,PrecisionTCXO/TCVCXO

MTRONPTI

mtronpti

M61512STSN

5.0x7.0mm,3.0,3.3&5.0V,HCMOSorClippedSineWave,PrecisionTCXO/TCVCXO

MTRONPTI

mtronpti

TISP61512P

DUALFORWARD-CONDUCTINGP-GATETHYRISTORSPROGRAMMABLEOVERVOLTAGEPROTECTORS

description TheTISP61511DandTISP61512Paredualforward-conductingbufferedp-gateovervoltageprotectors.TheyaredesignedtoprotectmonolithicSubscriberLineInterfaceCircuits,SLICs,againstovervoltagesonthetelephonelinecausedbylightning,acpowercontactandinduction.TheTISP

POINN

Power Innovations Ltd

UM61512A

64KX8BITHIGHSPEEDCMOSSRAM

GeneralDescription TheUM61512Aisalowoperatingcurrent524,288-bitstaticrandomaccessmemoryorganizedas65,536wordsby8bitsandoperatesonasingle5Vpowersupply.ItisbuiltusingUMCshighperformanceCMOSprocess. Features ■Single+5Vpowersupply ■Accesstimes:15/20/

UMCUMC Corporation

联电联华电子股份有限公司

UM61512AV

64KX8BITHIGHSPEEDCMOSSRAM

GeneralDescription TheUM61512Aisalowoperatingcurrent524,288-bitstaticrandomaccessmemoryorganizedas65,536wordsby8bitsandoperatesonasingle5Vpowersupply.ItisbuiltusingUMCshighperformanceCMOSprocess. Features ■Single+5Vpowersupply ■Accesstimes:15/20/

UMCUMC Corporation

联电联华电子股份有限公司

UT61512

64KX8BITHIGHSPEEDCMOSSRAM

[Utron]

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