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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
FLM1011-3F	文件：308.12 Kbytes Page：4 Pages	X,Ku-BandInternallyMatchedFET DESCRIPTION TheFLM1011-3FisapowerGaAsFETthatisinternallymatchedforstandardcommunicationbandstoprovideoptimumpowerandgainina50ohmsystem. Eudyna’sstringentQualityAssuranceProgramassuresthehighestreliabilityandconsistentperformance. FEATURES •HighOutputPower	EUDYNA Eudyna Devices Inc	EUDYNA
L-1011-3	文件：37.19 Kbytes Page：1 Pages	CHO-STRAPINSULATEDGROUNDSTRAP	etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商	etc2
NEZ1011-3E	文件：199.02 Kbytes Page：14 Pages	N-CHANNELGaAsMESFET 3WX,Ku-BANDPOWERGaAsMESFET DESCRIPTION TheNEZ1011-3EandNEZ1414-3EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhigh outputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwith onlya50Wexternalcircuit.To	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NEZ1011-3E	文件：82.74 Kbytes Page：12 Pages	N-CHANNELGaAsMESFET DESCRIPTION TheNEZ1011-3EandNEZ1414-3EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhighoutputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwithonlya50Ωexternalcircuit.Toreducethermalresistancethedevic	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC

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