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TICP107

SILICONCONTROLLEDRECTIFIERS

SILICONCONTROLLEDRECTIFIERS ●1AContinuousOn-StateCurrent ●15ASurge-Current ●GlassPassivatedWafer ●400Vto600VOff-StateVoltage ●IGT50µAmin,200µAmax ●di/dt100A/µs ●PackageOptions

POINN

Power Innovations Ltd

TICP107D

SILICONCONTROLLEDRECTIFIERS

SILICONCONTROLLEDRECTIFIERS ●1AContinuousOn-StateCurrent ●15ASurge-Current ●GlassPassivatedWafer ●400Vto600VOff-StateVoltage ●IGT50µAmin,200µAmax ●di/dt100A/µs ●PackageOptions

POINN

Power Innovations Ltd

TICP107M

SILICONCONTROLLEDRECTIFIERS

SILICONCONTROLLEDRECTIFIERS ●1AContinuousOn-StateCurrent ●15ASurge-Current ●GlassPassivatedWafer ●400Vto600VOff-StateVoltage ●IGT50µAmin,200µAmax ●di/dt100A/µs ●PackageOptions

POINN

Power Innovations Ltd

TIP107

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-3A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP100/101/102

SEMIHOW

SemiHow Co.,Ltd.

TIP107

TO-220-PowerTransistorsandDarlingtons

RECTRON

Rectron Semiconductor

TIP107

SiliconPNPDarlingtonPowerTransistors

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

TIP107

PNPPlasticMedium-PowerSiliconTransistors

Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=2500(Typ)@IC=4.0Adc •LowCollector-EmitterSaturationVoltage •MonolithicConstructionwithBuilt-inBase-EmitterShuntResistors •TO-220Compac

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

TIP107

PowerDarlingtonsforLinearandSwitchingApplications

TIP100,101,102NPNPLASTICPOWERTRANSISTORS TIP105,106,107PNPPLASTICPOWERTRANSISTORS PowerDarlingtonsforLinearandSwitchingApplications

bocaBoca Semiconductor Corporation

博卡博卡半导体公司

TIP107

PNPSILICONPOWERDARLINGTONS

●DesignedforComplementaryUsewithTIP100,TIP101andTIP102 ●80Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MaximumVCE(sat)of2.5VatIC=8A

POINN

Power Innovations Ltd

TIP107

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

PlasticMedium−PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min)−

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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